2PA1774R PDF даташит
Спецификация 2PA1774R изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor». |
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Детали детали
Номер произв | 2PA1774R |
Описание | PNP general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
2PA1774
PNP general purpose transistor
Preliminary specification
Supersedes data of 1997 Jul 09
1999 Jun 01
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Preliminary specification
2PA1774
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching and amplification in
communication, electronic data processing (EDP) and
consumer applications.
DESCRIPTION
PNP transistor in an SC-75 plastic package.
NPN complement: 2PC4617.
MARKING
TYPE NUMBER
2PA1774Q
2PA1774R
2PA1774S
MARKING CODE
YQ
YR
YS
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
handbook, halfpage
3
1
Top view
2
3
1
2
MAM362
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−50
−40
−5
−100
−200
−100
150
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Jun 01
2
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Preliminary specification
2PA1774
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PA1774Q
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −4 V
IC = −1 mA; VCE = −6 V; note 1
−
−
−
120
2PA1774R
180
2PA1774S
270
collector-emitter saturation voltage
collector capacitance
transition frequency
IC = −50 mA; IB = −5 mA; note 1
IE = ie = 0; VCB = −12 V; f = 1 MHz
IE = −2 mA; VCE = −12 V; f = 100 MHz;
note 1
−
−
100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
−100
−5
−100
UNIT
nA
µA
nA
270
390
560
−200
2.2
−
mV
pF
MHz
1999 Jun 01
3
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Номер в каталоге | Описание | Производители |
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