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2PA1774R PDF даташит

Спецификация 2PA1774R изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor».

Детали детали

Номер произв 2PA1774R
Описание PNP general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PA1774R Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
2PA1774
PNP general purpose transistor
Preliminary specification
Supersedes data of 1997 Jul 09
1999 Jun 01









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2PA1774R Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Preliminary specification
2PA1774
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V).
APPLICATIONS
General purpose switching and amplification in
communication, electronic data processing (EDP) and
consumer applications.
DESCRIPTION
PNP transistor in an SC-75 plastic package.
NPN complement: 2PC4617.
MARKING
TYPE NUMBER
2PA1774Q
2PA1774R
2PA1774S
MARKING CODE
YQ
YR
YS
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
handbook, halfpage
3
1
Top view
2
3
1
2
MAM362
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
50
40
5
100
200
100
150
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Jun 01
2









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2PA1774R Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Preliminary specification
2PA1774
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PA1774Q
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
120
2PA1774R
180
2PA1774S
270
collector-emitter saturation voltage
collector capacitance
transition frequency
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 12 V; f = 1 MHz
IE = 2 mA; VCE = 12 V; f = 100 MHz;
note 1
100
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX.
100
5
100
UNIT
nA
µA
nA
270
390
560
200
2.2
mV
pF
MHz
1999 Jun 01
3










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