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2PA1576S PDF даташит

Спецификация 2PA1576S изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor».

Детали детали

Номер произв 2PA1576S
Описание PNP general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PA1576S Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PA1576
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 28
1999 May 31









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2PA1576S Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V)
Low collector capacitance (typ. 2.5 pF).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SC-70 (SOT323) plastic package.
NPN complement: 2PC4081.
MARKING
TYPE NUMBER
2PA1576Q
2PA1576R
2PA1576S
MARKING CODE (1)
FQ
FR
FS
Note
1. = -: Made in Hong Kong.
= t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
Top view
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
open emitter
collector-emitter voltage
open base
emitter-base voltage
open collector
collector current (DC)
peak collector current
peak base current
total power dissipation
Tamb 25 °C; note 1
storage temperature
junction temperature
operating ambient temperature
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MIN.
65
65
MAX.
50
40
5
100
200
200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 31
2









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2PA1576S Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MAX.
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PA1576Q
2PA1576R
2PA1576S
saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V
120
180
270
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 12 V; f = 1 MHz
IC = 2 mA; VCE = 12 V; f = 100 MHz
100
TYP.
2.5
MAX. UNIT
100
5
100
nA
µA
nA
270
390
560
500
3.5
mV
pF
MHz
1999 May 31
3










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