2PA1576S PDF даташит
Спецификация 2PA1576S изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor». |
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Детали детали
Номер произв | 2PA1576S |
Описание | PNP general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PA1576
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 28
1999 May 31
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Low collector capacitance (typ. 2.5 pF).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SC-70 (SOT323) plastic package.
NPN complement: 2PC4081.
MARKING
TYPE NUMBER
2PA1576Q
2PA1576R
2PA1576S
MARKING CODE (1)
F∗Q
F∗R
F∗S
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
Top view
2
MAM048
Fig.1 Simplified outline (SC-70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
open emitter
collector-emitter voltage
open base
emitter-base voltage
open collector
collector current (DC)
peak collector current
peak base current
total power dissipation
Tamb ≤ 25 °C; note 1
storage temperature
junction temperature
operating ambient temperature
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−50
−40
−5
−100
−200
−200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 31
2
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1576
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
note 1
Note
1. Refer to SC-70 (SOT323) standard mounting conditions.
MAX.
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PA1576Q
2PA1576R
2PA1576S
saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −4 V
IC = −1 mA; VCE = −6 V
−
−
−
120
180
270
IC = −50 mA; IB = −5 mA; note 1
IE = ie = 0; VCB = −12 V; f = 1 MHz
IC = −2 mA; VCE = −12 V; f = 100 MHz
−
−
100
TYP.
−
−
−
−
−
−
−
2.5
−
MAX. UNIT
−100
−5
−100
nA
µA
nA
270
390
560
−500
3.5
−
mV
pF
MHz
1999 May 31
3
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Номер в каталоге | Описание | Производители |
2PA1576 | PNP general purpose transistor | NXP Semiconductors |
2PA1576Q | PNP general purpose transistor | NXP Semiconductors |
2PA1576R | PNP general purpose transistor | NXP Semiconductors |
2PA1576S | PNP general purpose transistor | NXP Semiconductors |
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