2PA1015GR PDF даташит
Спецификация 2PA1015GR изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor». |
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Детали детали
Номер произв | 2PA1015GR |
Описание | PNP general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
1999 Apr 08
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1015
FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM285
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−50
−50
−5
−150
−200
−200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1015
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
fT
F
collector cut-off current
emitter cut-off current
DC current gain
2PA1015Y
IE = 0; VCB = −50 V
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −6 V
−
−
120
2PA1015GR
200
DC current gain
IC = −150 mA; VCE = −6 V
25
collector-emitter saturation voltage IC = −100 mA; IB = −10 mA
−
base-emitter saturation voltage IC = −100 mA; IB = −10 mA
−
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
transition frequency
IC = −1 mA; VCB = −10 V; f = 100 MHz 80
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−
−
−
−
−
−
−
4
−
−
−100 nA
−100 nA
240
400
−
−300
−1.1
7
−
10
mV
V
pF
MHz
dB
1999 Apr 08
3
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2PA1015GR | PNP general purpose transistor | NXP Semiconductors |
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