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2PA1015GR PDF даташит

Спецификация 2PA1015GR изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor».

Детали детали

Номер произв 2PA1015GR
Описание PNP general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PA1015GR Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
1999 Apr 08









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2PA1015GR Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1015
FEATURES
Low current (max. 150 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM285
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
50
50
5
150
200
200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2









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2PA1015GR Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1015
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
fT
F
collector cut-off current
emitter cut-off current
DC current gain
2PA1015Y
IE = 0; VCB = 50 V
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 6 V
120
2PA1015GR
200
DC current gain
IC = 150 mA; VCE = 6 V
25
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
base-emitter saturation voltage IC = 100 mA; IB = 10 mA
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
transition frequency
IC = 1 mA; VCB = 10 V; f = 100 MHz 80
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
4
100 nA
100 nA
240
400
300
1.1
7
10
mV
V
pF
MHz
dB
1999 Apr 08
3










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Номер в каталогеОписаниеПроизводители
2PA1015GRPNP general purpose transistorNXP Semiconductors
NXP Semiconductors

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