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Datasheet 2N7002 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N7002 | N-Channel Advanced Power MOSFET 2N7002
N-Channel Advanced Power MOSFET
Features
• 60V/0.5A,
RDS (ON) =4500mΩ(Typ.)@VGS=10V RDS (ON) =5250mΩ(Typ.)@VGS=4.5V
• Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Power Management | Ruichips | mosfet |
2 | 2N7002 | N-channel MOSFET 2N7002
N-CHANNEL MOSFET
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
Pb-free; RoHS-compliant
MARKING: 7002
MAXIMUM RATINGS (TA=25 oC unless ot | Silicon Standard | mosfet |
3 | 2N7002 | N-CHANNEL MOSFET 2N7002
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features 灵敏的控制级触发电流和很低的维持电流,内置静电保护二极管. Sensitive gate trigger current and Low Hold | BLUE ROCKET ELECTRONICS | mosfet |
4 | 2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23
DESCRIPTION
• N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process.
FEAT | Pan Jit International Inc. | transistor |
5 | 2N7002 | N-channel Trench MOSFET DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002 N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
FEATURES • Direct interface to C-MOS, TTL, etc. • High- | NXP Semiconductors | mosfet |
2N7 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N70 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T Unisonic Technologies mosfet | | |
2 | 2N70-M | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist Unisonic Technologies mosfet | | |
3 | 2N7000 | N-CHANNEL MOSFET 2N7000
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current.
用途 / Applic BLUE ROCKET ELECTRONICS mosfet | | |
4 | 2N7000 | Small Signal MOSFET 2N7000
Small Signal MOSFET
200 mA, 60 V N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 MΩ)
Gate-source Voltage Drain Current
Continuous Non-repetitive ( tp ≤ 50 � SEMTECH mosfet | | |
5 | 2N7000 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Vol KEC transistor | | |
6 | 2N7000 | Small Signal MOSFET WEITRON
Small Signal MOSFET N-Channel
3 DRAIN
Features:
*Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns
2 GATE
1 SOURCE
2N7000
TO-92
1. SOURCE 2. GATE 3. DRAIN
1 2 3
Maximum Ratings (TA=25 C Unless WEITRON mosfet | | |
7 | 2N7000 | N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives.
D
SEATING PLANE
b1
TO-92
E S1
SeCoS mosfet | |
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