DataSheet26.com

7N90 PDF даташит

Спецификация 7N90 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «900V N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 7N90
Описание 900V N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

6 Pages
scroll

No Preview Available !

7N90 Даташит, Описание, Даташиты
7N90
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
7A, 900V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 7N90 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 7N90 is universally applied in active power factor
correction, electronic lamp ballast based on half bridge topology and
high efficient switched mode power supply.
„ FEATURES
* High switching speed
* RDS(ON)=1.8@ VGS=10V
* Typically 40nC low gate charge
* 100% avalanche tested
* Typically 17pF low CRSS
* Improved dv/dt capability
„ SYMBOL
http://www.DataSheet4U.net/
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N90L-TF1-T
7N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-475.b
datasheet pdf - http://www.DataSheet4U.net/









No Preview Available !

7N90 Даташит, Описание, Даташиты
7N90
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
900 V
±30 V
Continuous Drain Current
TC=25°C
TC=100°C
Pulsed Drain Current (Note 2)
ID
IDM
7.0 A
4.4 A
28 A
Avalanche Current (Note 2)
IAR 6.4 A
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
EAS
EAR
500 mJ
21 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0 V/ns
Power Dissipation
Junction Temperature
PD 32 W
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=20mH, IAS=7.0A, VDD= 50V, RG=25, Starting TJ=25°C
4. ISD 7.0A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
http://www.DataSheet4U.net/
RATINGS
62.5
3.87
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-475.b
datasheet pdf - http://www.DataSheet4U.net/









No Preview Available !

7N90 Даташит, Описание, Даташиты
7N90
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS VDS=0V ,VGS=30V
IGSS VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3.5A
VDS=50V, ID=3.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=720V, VGS=10V,
ID=7.0A (Note 4,5)
VDD=450V, ID=7.0A,
RG=25(Note 4.,5)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
http://www.DataSheet4U.net/
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7.0A, VGS=0V
Body Diode Reverse Recovery Time
trr VGS=0V, IS=7.0A,
Body Diode Reverse Recovery Charge
QRR dIF/dt=100A/μs (Note 4)
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN
900
3.0
TYP
0.96
1.5
5.7
1440
140
17
40
8.5
20
35
80
95
55
400
4.3
MAX UNIT
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.8
S
1880
185
23
pF
pF
pF
52 nC
nC
nC
80 ns
170 ns
200 ns
120 ns
6.4 A
25.6 A
1.4 V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-475.b
datasheet pdf - http://www.DataSheet4U.net/










Скачать PDF:

[ 7N90.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
7N90N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
7N90900V N-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies
7N90-MK6N-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск