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PDF MDD1752 Data sheet ( Hoja de datos )
| Número de pieza | MDD1752 | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip Semiconductor | |
| Logotipo |  |
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MDD1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
The MDD1752 uses advanced MagnaChip’s trench
MOSFET Technology to provide high performance in on-
state resistance, switching performance and reliability
Low RDS(ON), low gate charge can be offering superior
benefit in the application.
Features
VDS = 40V
ID = 50A @VGS = 10V
RDS(ON)
< 8.0mΩ @ VGS = 10V
< 10.5mΩ@ VGS = 4.5V
Applications
Inverters
General purpose applications
D
http://www.DataSheet4U.net/
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
(Note 2)
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
TC=25oC
TA=25oC
(a)
(b)
TC=25oC
TA=25oC
(Note 3)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
40
±20
50
15.2
100
45
3.1
153
-55~+150
Rating
40
2.8
Unit
V
V
A
A
A
W
mJ
oC
Unit
oC/W
June 2008. Version 1.2
1 MagnaChip Semiconductor Ltd.
datasheet pdf - http://www.DataSheet4U.net/
1 page  
100
Single Pulse
80
RΘ JA=96℃/W
TA=25℃
60
40
20
0
1E-3
0.01
0.1 1 10
T1, Time [sec]
100 1000
Fig13. Single Pulse Maximum Power
Dissipation
50
Single Pulse
40
RΘ JA=96℃/W
TA=25℃
30
20
10
0
1E-3
0.01
0.1 1 10
T1, Time [sec]
100 1000
Fig14. Single Pulse Maximum Peak Current
http://www.DataSheet4U.net/
June 2008. Version 1.2
5 MagnaChip Semiconductor Ltd.
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MDD1752.PDF ] | |
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