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PDF BD132 Data sheet ( Hoja de datos )
| Número de pieza | BD132 | |
| Descripción | SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
| Fabricantes | Comset Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD132 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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PNP BD132
SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD132 are PNP transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
PNP complements are BD131
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCEO
-VCBO
-VEBO
IC
IB
PT
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Value
45
45
4
-IC
-ICM
-IBM
-IBM
www.DataSheet.net/
@ Tmb = 60°C
3
6
0.5
0.5
15
150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
°C
Symbol
Ratings
RthJ-mb Thermal Resistance, Junction to mouting base
Value
6
Unit
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICBO
-IEBO
-VCE(SAT)
-VBE(SAT)
hFE
Collector cut-off current
IE=0 , -VCB=40 V
IE=0 , -VCB=40 V ,Tj= 150°C
Emitter cut-offcurrent
IC=0, -VEB=3 V
Collector-Emitter saturation -IC=0.5 A, -IB=50 mA
Voltage
-IC=2.0 A, -IB=200 mA
Base-Emitter saturation -IC=0.5 A, -IB=50 mA
Voltage
-IC=2.0 A, -IB=200 mA
DC Current Gain
-VCE=12 V, -IC=500m A
-VCE=1 V, -IC=2 A
Min Typ Max Unit
-
-
-
-
5
500
µA
- - 5 µA
-
-
-
-
0.3
1.2
V
-
-
-
-
0.7
1,5
V
40 -
-
20 -
-
18/10/2012
COMSET SEMICONDUCTORS
1|2
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD132.PDF ] | |
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