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PDF TGS2353 Data sheet ( Hoja de datos )
| Número de pieza | TGS2353 | |
| Descripción | DC - 18 GHz High Power GaN SPDT Switch | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGS2353
DC – 18 GHz High Power SPDT Switch
Applications
• High Power Switching
Product Features
• Frequency Range: DC – 18 GHz
• Input Power: up to 10 W
• Insertion Loss: < 1.5 dB
• Isolation: -30 dB typical
• Switching Speed: < 35 ns
• Control Voltages: 0 V/-40 V from either side of
MMIC
• Dimensions: 1.15 x 1.65 x 0.1 mm
Functional Block Diagram
Vc2 2, 7
J1
RF In
Vc1
1
3, 6
4 J2
RF Out1
5 J3
RF Out2
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General Description
The TriQuint TGS2353 is a Single-Pole, Double-Throw
(SPDT) Switch. The TGS2353 operates from DC to 18
GHz and is designed using TriQuint’s 0.25um GaN on
SiC production process.
The TGS2353 typically provides up to 10 W input power
handling at control voltages of 0/-40 V. This switch
maintains low insertion loss < 1.5 dB, and high isolation
-30 dB typical.
The TGS2353 is ideally suited for High Power
Switching application.
Lead-free and RoHS compliant
Bond Pad Configuration
Bond Pad #
1
2, 7
3, 6
4
5
Symbol
RF In
Vc2
Vc1
RF Out1
RF Out2
Preliminary Data Sheet: Rev A 06/20/11
© 2011 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
TGS2353
ECCN
EAR99
Description
DC – 18 GHz High Power
SPDT Switch
- 1 of 10 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TGS2353
DC – 18 GHz High Power SPDT Switch
Application Circuit
Vc2 2, 7
J1
RF In
1
Vc1 3, 6
4 J2
RF Out1
5 J3
RF Out2
Vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open.
Vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open.
This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused
RF Out port with a 50 Ohm load.
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Bias-up Procedure
Vc1 set to -40 V (On State for Insertion Loss) or 0 V (OFF State
for Isolation)
Vc2 set to 0 V (On State for Insertion Loss) or -40 V (OFF State
for Isolation)
Apply RF signal to RF Input
Bias-down Procedure
Turn off RF supply
Turn Vc1 to 0V
Turn Vc2 to 0 V
Function Table
RF Path
RF In to RF Out1 (50 Ohm load to RF Out2)
RF In to RF Out2 (50 Ohm load to RF Out1)
State
On-State (Insertion Loss)
Off-State (Isolation)
On-State (Insertion Loss)
Off-State (Isolation)
Vc1
0V
-40 V
-40 V
0V
Vc2
-40 V
0V
0V
-40 V
Preliminary Data Sheet: Rev A 06/20/11
© 2011 TriQuint Semiconductor, Inc.
- 5 of 10 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TGS2353.PDF ] | |
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