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LVB14A Datasheet Download - Vishay

Номер произв LVB14A
Описание Low VF Surface Mount Transient Voltage Suppressors
Производители Vishay
логотип Vishay логотип 



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LVB14A Даташит, Описание, Даташиты
New Product
LVB14A
Vishay General Semiconductor
Low VF Surface Mount Transient Voltage Suppressors
DO-214AA (SMB J-Bend)
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 µs)
• Ideal for automated placement
• Low forward voltage
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
VBR
IPPM with 10 x 1000 µs
IPPM with 1.4 x 6.5 µs
VF at IF = 1.0 A
IFSM
TJ max.
13.2 - 14.8 V
31 A
17.5 A
0.35 V
100 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs sensor units specifically for protecting
12 V supplied sensitive equipment against transient
overvoltages.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Moldingwww.DataSheet.co.kr compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Peak power pulse current with a 10/1000 µs waveform (Fig. 1) (1)(2)
Peak pulse current with a 1.4/6.5 µs waveform (Fig. 2)
Peak forward surge current 8.3 ms single half sine-wave (2)
Power dissipation on infinite heatsink, TL = 50 °C
Operating junction and storage temperature range
Notes:
IPPM
IPPM
IFSM
PD
TJ, TSTG
(1) Non-repetitive current pulse, per Fig. 1 and derated above TA = 25 °C per Fig. 1
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal
VALUE
L14
31
17.5
100
5
- 65 to + 150
UNIT
A
A
A
W
°C
Document Number: 88483 For technical questions within your region, please contact one of the following:
Revision: 20-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
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LVB14A Даташит, Описание, Даташиты
LVB14A
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Max. clamping voltage with 10 x 1000 µs
Max. clamping voltage with 1.4 x 6.5 µs
Instantaneous forward voltage (1)
Reverse leakage current (1)
at IZ = 1 mA
at IPPM = 31 A
at IPPM = 17.5 A
at IF = 1.0 A
TJ = 25 °C
TJ = 125 °C
at VWM = 12.0 V
VBR
VC
VC
VF
IR
13.2
-
-
-
-
-
Note:
(1) Measured on a 300 µs square pulse width
TYP.
-
-
-
0.45
0.35
-
MAX.
14.8
19.5
15.8
0.5
-
100
UNIT
V
V
V
V
µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient (1)
Note:
RθJL
RθJA
(1) Thermal resistance from junction to ambient - Mounted on the recommended P.C.B. pad layout
VALUE
20
100
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
LVB14A-E3/52
0.096
52
www.DataSheet.co.kr
LVB14A-E3/5B
0.096
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
150
TJ = 25 °C
tr = 10 µs
Pulse Width (td)
is defined as the Point
100
Peak Value
IPPM
where the Peak Current
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50 10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Figure 1. Pulse Waveform
4.0
% IPPM (IPPM = 17.5 A)
1.4 µs
100
50 Pulse Waveform 1.4/6.5 µs
0
6.5 µs
t - Time (µs)
Figure 2. Pulse Waveform
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88483
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 20-Oct-08
Datasheet pdf - http://www.DataSheet4U.net/







No Preview Available !

LVB14A Даташит, Описание, Даташиты
New Product
LVB14A
Vishay General Semiconductor
100
75
50
25
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 3. Pulse Poweror Current vs. Initial Junction Temperature
10 000
1000
100
0
5 10
Reverse Voltage (V)
15
Figure 5. Typical Junction Capacitance
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
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0.1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
1.0
Figure 4. Typical Instantaneous Forward Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 88483 For technical questions within your region, please contact one of the following:
Revision: 20-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/










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