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Номер произв 04N70BF-H
Описание AP04N70BF-H
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 



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04N70BF-H Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP04N70BF-H
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
700V
2.4Ω
4A
Description
AP04N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
DS
TO-220FM
The TO-220FM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet.co.kr
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
±30
4
2.5
15
33
0.26
100
4
4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.8
65
Units
/W
/W
Data & specifications subject to change without notice
200704051-1/6
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04N70BF-H Даташит, Описание, Даташиты
AP04N70BF-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=2A
VDS=600V, VGS=0V
VDS=480V,VGS=0V
VGS=±30V
ID=4A
VDS=480V
VGS=10V
VDD=300V
ID=4A
RG=10Ω,VGS=10V
RD=75Ω
VGS=0V
VDS=25V
f=1.0MHz
700 -
- 0.6
-V
- V/
- - 2.4 Ω
2 - 4V
- 2.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 16.7 - nC
- 4.1 - nC
- 4.9 - nC
- 11 - ns
- 8.3 - ns
- 23.8 - ns
- 8.2 - ns
- 950 - pF
- 65 - pF
- 6 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
www.DataSheet.co.kr
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=4A, VGS=0V
Min. Typ. Max. Units
- - 4A
- - 15 A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A.
3.Pulse width <300us , duty cycle <2%.
2/6
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04N70BF-H Даташит, Описание, Даташиты
AP04N70BF-H
2.5
T C =25 o C
2
1.5
1
V G =10V
V G =6.0V
V G =5.0V
V G =4.5V
0.5 V G =4.0V
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
T C =150 o C
1.5
1
V G =10V
V G =6.0V
V G =5.0V
V G =4.5V
0.5 V G =4.0V
V G =3.5V
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
www.DataSheet.co.kr
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
2.8
I D =2A
2.4
V G =10V
2
1.6
1.2
0.8
0.4
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
3/6
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