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07N60C3 PDF даташит

Спецификация 07N60C3 изготовлена ​​​​«Infineon» и имеет функцию, называемую «Power Transistor».

Детали детали

Номер произв 07N60C3
Описание Power Transistor
Производители Infineon
логотип Infineon логотип 

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07N60C3 Даташит, Описание, Даташиты
SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
0.6
7.3
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
High peak current capability
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP07N60C3
SPI07N60C3
SPA07N60C3
Package
PG-TO220-3
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4400
Q67040-S4424
SP000216303
Marking
07N60C3
07N60C3
07N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
7.3
4.6
21.9
230
7.31)
4.61)
21.9
230
0.5 0.5
7.3 7.3
±20 ±20
±30 ±30
83 32
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
Page 1
2009-11-27









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07N60C3 Даташит, Описание, Даташиты
SPP07N60C3
SPI07N60C3, SPA07N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Symbol
dv/dt
Value
50
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ.
-
-
-
-
max.
1.5
3.9
62
80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=7.3A
600
-
-
700
-
-
Gate threshold voltage
VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
Tj=25°C
- 0.5 1
Tj=150°C
- - 100
Gate-source leakage current
I GSS
VGS=30V, VDS=0V
-
- 100
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A
Tj=25°C
- 0.54 0.6
Tj=150°C
- 1.46 -
Gate input resistance
RG
f=1MHz, open drain
-
0.8
-
Unit
V
µA
nA
Rev. 3.2
Page 2
2009-11-27









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07N60C3 Даташит, Описание, Даташиты
SPP07N60C3
SPI07N60C3, SPA07N60C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=4.6A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
-
-
-
-
-
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=380V, VGS=0/13V,
ID=7.3A, RG=12,
Tj=125°C
-
-
-
-
Values
typ. max.
6-
790 -
260 -
16 -
30 -
55 -
6-
3.5 -
60 100
7 15
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=480V, ID=7.3A
Gate to drain charge
Gate charge total
Qgd
Qg
VDD=480V, ID=7.3A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=7.3A
- 3 - nC
- 9.2 -
- 21 27
- 5.5 - V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.2
Page 3
2009-11-27










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