Datasheet D10SB60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	D10SB60	10A(SIP) BRIDGE RECTIFIERS	Leshan Radio Company	rectifier
2	D10SB60	SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER SHANGHAI SUNRISE ELECTRONICS CO., LTD. D10SB10 THRU D10SB100 SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 10A FEATURES • Glass passivated junction chip • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique •	Shanghai Sunrise Electronics	rectifier
3	D10SB60	Single-phase Silicon Bridge Rectifier SIYU R 塑封硅整流桥堆反向电压 200---800V 正向电流 10 A D5 3.0*45 0 30.3 29.7 4.8 4.4 3.8 3.4 D10SB20......D10SB80 Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800V Forward Current 10A 特征 Features ·反向漏电流低 Low reverse leakage High forward surge capabil	SIYU	rectifier
4	D10SB60	Molding Single-Phase Bridge Rectifier Elektronische Bauelemente D10SB10 ~ D10SB100 100 V ~ 1000 V 10.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES  Plastic Package has Underwriters Laboratory Flammability Cla	SeCoS	rectifier

D10 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	D10	Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte	STMicroelectronics	data
2	D1000	NPN Transistor, 2SD1000	Renesas	data
3	D1001	NPN Transistor, 2SD1001	Renesas	data
4	D1001UK	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D 4 M 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA	Seme LAB	data
5	D1002UK	METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.1	Seme LAB	gate
6	D1003UK	METAL GATE RF SILICON FET TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIA	Seme LAB	gate
7	D1004	METAL GATE RF SILICON FET TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I F M K J N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss	Seme LAB	gate

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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