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88N04 PDF даташит

Спецификация 88N04 изготовлена ​​​​«NEC» и имеет функцию, называемую « NP88N04».

Детали детали

Номер произв 88N04
Описание NP88N04
Производители NEC
логотип NEC логотип 

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88N04 Даташит, Описание, Даташиты
www.DataSheet.co.kr
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE
NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N04EHE-E1-AY Note1, 2
NP88N04EHE-E2-AY Note1, 2
NP88N04KHE-E1-AY Note1
NP88N04KHE-E2-AY Note1
NP88N04CHE-S12-AZ Note1, 2
NP88N04DHE-S12-AY Note1, 2
NP88N04MHE-S18-AY Note1
NP88N04NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
Low input capacitance
Ciss = 7300 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14236EJ8V0DS00 (8th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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88N04 Даташит, Описание, Даташиты
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NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±88
±352
Total Power Dissipation (TA = 25°C)
PT1
1.8
Total Power Dissipation (TC = 25°C) PT2 288
Channel Temperature
Tch 175
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg 55 to +175
IAS 75/88
EAS 562/232
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
2 Data Sheet D14236EJ8V0DS
Datasheet pdf - http://www.DataSheet4U.net/









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88N04 Даташит, Описание, Даташиты
www.DataSheet.co.kr
NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage
IGSS
VGS(th)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 44 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
VDD = 20 V, ID = 44 A,
VGS = 10 V,
RG = 1 Ω
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG VDD = 32 V,
QGS
QGD
VGS = 10 V,
ID = 88 A
Body Diode Forward Voltage
VF(S-D)
IF = 88 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 88 A, VGS = 0 V,
Qrr di/dt = 100 A/μs
MIN.
2.0
30
TYP.
3.0
60
3.4
7300
1400
620
38
27
110
32
120
30
43
0.95
64
99
MAX.
10
±10
4.0
4.3
11000
2100
1120
84
68
220
80
180
UNIT
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D14236EJ8V0DS
3
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