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2P102A PDF даташит

Спецификация 2P102A изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «FDFS2P102A».

Детали детали

Номер произв 2P102A
Описание FDFS2P102A
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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2P102A Даташит, Описание, Даташиты
www.DataSheet.co.kr
August 2001
FDFS2P102A
Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
General Description
The FDFS2P102A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
–3.3 A, –20V RDS(ON) = 125 m@ VGS = –10 V
RDS(ON) = 200 m@ VGS = –4.5 V
VF < 0.39 V @ 1 A (TJ = 125°C)
VF < 0.47 V @ 1 A
VF < 0.58 V @ 2 A
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
Electrically independent Schottky and MOSFET
pinout for design flexibility
D
D
C
C
SO-8
Pin 1
G
S
A
A
A1
A2
S3
G4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDFS2P102A
FDFS2P102A
13’’
Ratings
20
±20
3.3
10
2
1.6
1
0.9
55 to +150
20
1
Tape width
12mm
8C
7C
6D
5D
Units
V
V
A
W
°C
V
A
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDFS2P102A Rev A1(W)
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2P102A Даташит, Описание, Даташиты
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VDS = –16 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –10 V, ID = –3.3 A
VGS = –4.5 V, ID = –2.5 A
VGS=–10 V, ID =–3.3A, TJ=125°C
VGS = –10 V, VDS = –5 V
VDS = –5V, ID = –3.3 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = –10 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6
VDS = –10 V,
VGS = –5 V
ID = –3.3 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2)
Schottky Diode Characteristics
IR Reverse Leakage
VF Forward Voltage
VR = 20 V
IF = 1 A
IF = 2 A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
–20
–1
–10
V
–23 mV/°C
–1
100
–100
µA
nA
nA
–1.8 –3
V
4.4 mV/°C
96 125
152 200
137 190
m
A
4.6 S
182 pF
60 pF
24 pF
5 10
14 52
11 20
24
2.1 3.0
1.0
0.6
ns
ns
ns
ns
nC
nC
nC
–1.3
–0.8 –1.2
A
V
50
18
0.47
0.39
0.58
0.53
µA
mA
V
FDFS2P102A Rev A1(W)
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2P102A Даташит, Описание, Даташиты
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Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDFS2P102A Rev A1(W)
Datasheet pdf - http://www.DataSheet4U.net/










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