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2SK4197LS PDF даташит

Спецификация 2SK4197LS изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «N-Channel Silicon MOSFET».

Детали детали

Номер произв 2SK4197LS
Описание N-Channel Silicon MOSFET
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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2SK4197LS Даташит, Описание, Даташиты
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Ordering number : ENA1223
2SK4197LS
SANYO Semiconductors
DATA SHEET
2SK4197LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW10μs, duty cycle1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
600 V
±30 V
3.5 A
3.3 A
13 A
2.0 W
28 W
Channel Temperature
Tch
150 °C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
*1 Shows chip capability
EAS
IAV
36.6
3.5
mJ
A
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=5mH, IAV=3.5A
*5 L5mH, single pulse
Marking : K4197
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62508QB TI IM TC-00001485 No. A1223-1/5
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2SK4197LS Даташит, Описание, Даташиты
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2SK4197LS
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.8A
ID=1.8A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=200V, VGS=10V, ID=3.5A
VDS=200V, VGS=10V, ID=3.5A
VDS=200V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
Package Dimensions
unit : mm (typ)
7509-002
10.0
3.2
4.5
2.8
min
600
Ratings
typ
3
0.8 1.6
2.5
260
50
9.7
12
20
28
12
11
2.6
5.8
0.9
max
100
±100
5
3.25
1.2
Unit
V
μA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
0.9
1.2
0.75
123
2.55 2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
Switching Time Test Circuit
PW=10μs
D.C.0.5%
VGS=10V
VDD=200V
ID=1.8A
RL=111Ω
D VOUT
G
2SK4197LS
P.G RGS=50Ω S
Avalanche Resistance Test Circuit
50Ω
RG
L
2SK4197LS
10V
0V 50Ω
VDD
No. A1223-2/5
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2SK4197LS Даташит, Описание, Даташиты
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2SK4197LS
ID -- VDS
ID -- VGS
88
Tc=25°C
VDS=20V
77
10V
6 15V 6
55
Tc= --25°C
25°C
8V
4 4 75°C
33
22
1 VGS=5V 6V
0
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT13709
RDS(on) -- VGS
8
ID=1.8A
7
1
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT13710
RDS(on) -- Tc
8
7
66
5
Tc=75°C
4
3 25°C
2 --25°C
1
0
5 6 7 8 9 10 11 12 13 14 15
Gate-to-Source Voltage, VGS -- V IT13711
yfs-- ID
5
VDS=10V
3
2 25°C
1.0
7
Tc=
--25°C
75°C
5
3
2
0.1
0.1
5
3
2
23
5 7 1.0
23
57
Drain Current, ID -- A
IT13713
SW Time -- ID
VDD=200V
VGS=10V
100
7
5
3
2
10
7
0.1
tf
td(off)
tr
td(on)
23
5 7 1.0
23
57
Drain Current, ID -- A
IT13715
5
4
3
V GS=10V, I D=1.8A
2
1
0
--50
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
1000
7
5
3
2
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IS -- VSD
IT13712
VGS=0V
0.4 0.6 0.8 1.0 1.2 1.4
Diode Forward Voltage, VSD -- V IT13714
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
100
7
5
3
2
10
7
5
0
Coss
Crss
10 20 30 40 50
Drain-to-Source Voltage, VDS -- V IT13737
No. A1223-3/5
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