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PDF 160NTD Data sheet ( Hoja de datos )
| Número de pieza | 160NTD | |
| Descripción | Thyristor-Diode Modules | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
Thyristor – Diode Module
Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
160NTD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Symbol Values
Maximum average forward current @ TJ =
850C
IF(AV)
160
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
Maximum I2t for fusing @ t = 10ms
IF(RMS)
IFSM
I2t
350
5100
120
Units
A
A
A
kA2s
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
Thermal resistance, junction to case
TJ
Rth(JC)
M3 PACKAGE
Values
-65 to +125
0.16
Units
OC
OC/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
Symbol
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
Values
160
200 to 1600
1.5
150
2.5
200
500
1000
3500
Units
A
V
V
mA
V
mA
mA
V/µs
V
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 160NTD.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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