2SB1653 PDF даташит
Спецификация 2SB1653 изготовлена «Panasonic Semiconductor» и имеет функцию, называемую «Silicon PNP triple diffusion planar type(For power switching)». |
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Детали детали
Номер произв | 2SB1653 |
Описание | Silicon PNP triple diffusion planar type(For power switching) |
Производители | Panasonic Semiconductor |
логотип |
2 Pages
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Power Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
s Features
q High collector to emitter VCEO
q Low collector to emitter saturation voltage VCE(sat)
q Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–400
–400
–7
–1
– 0.5
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2
Unit: mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.7±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
0.4±0.1
2.05±0.2
123
1:Emitter
2:Collector
3:Base
MT3 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCB = –400V, IE = 0
VCE = –100V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
VCE = –5V, IC = –50mA
VCE = –5V, IC = –300mA
IC = –100mA, IB = –10mA
VCE = –100mA, IB = –10mA
VCB = –10V, IE = 0.2A, f = 1MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –100mA,
IB1 = –10mA, IB2 = 10mA,
VCC = –150V, RL = 1.5kΩ
min
–400
80
10
typ
– 0.25
– 0.8
20
25
1.0
0.8
1.0
max
–1
–1
–1
280
– 0.5
–1.2
50
Unit
µA
µA
mA
V
V
V
MHz
pF
µs
µs
µs
*hFE1 Rank classification
Rank
P
Q
hFE1 80 to 160 130 to 280
1
No Preview Available ! |
Power Transistors
PC — Ta
2.0
Without heat sink
1.6
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–480
–400
–320
–240
–160
–80
IC — VCE
Ta=25˚C
–9mA
–8mA IB=–10mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1653
VCE(sat) — IC
–10
IC/IB=10
–1
– 0.1 Ta=75˚C
–25˚C
25˚C
– 0.01
– 0.001
–1
–10
–100
–1000
Collector current IC (mA)
hFE — IC
240
VCE=–5V
200
Ta=75˚C
160
25˚C
120
–25˚C
80
40
0
–1
–10
–100
–1000
Collector current IC (mA)
Cob — VCB
60
IE=0
f=1MHz
50 TC=25˚C
40
30
20
10
0
–1 –10 –100
Collector to base voltage VCB (V)
2
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