DataSheet26.com

2SB1201 PDF даташит

Спецификация 2SB1201 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «PNP/NPN Epitaxial Planar Silicon Transistors».

Детали детали

Номер произв 2SB1201
Описание PNP/NPN Epitaxial Planar Silicon Transistors
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

10 Pages
scroll

No Preview Available !

2SB1201 Даташит, Описание, Даташиты
Ordering number : EN2112C
2SB1201/2SD1801
SANYO Semiconductors
DATA SHEET
2SB1201/2SD1801
PNP/NPN Epitaxial Planar Silicon Transistor
High-Current Switching
Applications
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of FBET, MBIT processes
Large current capacitance and wide ASO
Low collector-to-emitter saturation voltage
Fast switching speed
Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller
Specications ( ): 2SB1201
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
(--)60
(--)50
(--)6
(--)2
(--)4
Unit
V
V
V
A
A
Package Dimensions unit : mm (typ)
7518-003
Package Dimensions unit : mm (typ)
7003-003
Continued on next page.
6.5 2.3
6.5
5.0
0.5 2SB1201S-E
5.0
4
2SB1201T-E
4
2SD1801S-E
2SD1801T-E
2.3
0.5
2SB1201S-TL-E
2SB1201T-TL-E
2SD1801S-TL-E
2SD1801T-TL-E
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
B1201
D1801
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
2,4
RANK
LOT No.
RANK
LOT No.
11
TL
2SB1201 3
2SD1801 3
http://semicon.sanyo.com/en/network
60612 TKIM TB-00000906, TA-4180/10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112-1/10









No Preview Available !

2SB1201 Даташит, Описание, Даташиты
2SB1201/2SD1801
Continued from preceding page.
Parameter
Symbol
Conditions
Collector Dissipation
Junction Temperature
Storage Temperature
PC Tc=25°C
Tj
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)50V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)100mA
VCE=(--)2V, IC=(--)1.5A
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
VCE=(--)1A, IC=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
Ratings
0.8
15
150
--55 to +150
Unit
W
W
°C
°C
Ratings
min typ
100*
40
(--)60
(--)50
(--)6
150
(22)12
(--0.3)0.15
(--)0.9
60
(450)550
30
max
(--)100
(--)100
560*
(--0.7)0.4
(--)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
* : The 2SB1201/2SD1801 are classied by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
U
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.b1%
IB1
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100μF
RL
25Ω
+
470μF
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=500mA, VCC=25V
For PNP, the polarity is reversed.
Ordering Information
Device
2SB1201S-E
2SB1201T-E
2SD1801S-E
2SD1801T-E
2SB1201S-TL-E
2SB1201T-TL-E
2SD1801S-TL-E
2SD1801T-TL-E
Package
TP
TP
TP
TP
TP-FA
TP-FA
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
memo
Pb Free
No.2112-2/10









No Preview Available !

2SB1201 Даташит, Описание, Даташиты
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--1200
--1000
--800
--600
--400
--200
0
0
--2.4
--2.0
2SB1201/2SD1801
IC -- VCE
2SB1201
--20mA
--10mA
--8mA
--6mA
--4mA
--2mA
--0.4
--0.8
--1.2
IB=0
--1.6
--2.0
--2.4
Collector-to-Emitter
IC --
Voltage,
VCE
VCE
--
V
ITR09144
--7mA
2SB1201
--6mA
--5mA
--4mA
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1200
1000
800
--3mA
--2mA
--1mA
IB=0
--2 --4 --6 --8 --10 --12
Collector-to-Emitter Voltage,
IC -- VBE
VCE
--
V ITR09146
2SB1201
VCE= --2V
600
400
200
0
0
2.4
2.0
IC -- VCE
50mA 40mA
25mA
15mA
2SD1801
8mA
4mA
2mA
IB=0
0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter
IC --
Voltage,
VCE
VCE
--
V
ITR09145
7mA
2SD1801
6mA
5mA
4mA
3mA
2mA
1mA
IB=0
2 4 6 8 10 12
Collector-to-Emitter Voltage,
IC -- VBE
VCE
--
V ITR09147
2SD1801
VCE=2V
--1.6
1.6
--1.2
1.2
--0.8
0.8
--0.4
0
0
1000
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-EmhitFteEr Vo--ltagICe, VBE -- V ITR09148
2SB1201
VCE= --2V
Ta=75°C
--25°C
25°C
100
7
5
3
2
5 7 --0.01 2 3
5 7 --0.1
23
5 7 --1.0
23
Collector Current, IC -- A
ITR09150
0.4
0
0
1000
7
5
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR09149
hFE -- IC
2SD1801
VCE=2V
3 Ta=75°C
2 25°C
--25°C
100
7
5
3
2
5 7 0.01
2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A
ITR09151
No.2112-3/10










Скачать PDF:

[ 2SB1201.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2SB1201PNP/NPN Epitaxial Planar Silicon TransistorsSanyo Semicon Device
Sanyo Semicon Device
2SB1201Bipolar TransistorON Semiconductor
ON Semiconductor
2SB1201High-Current Switching ApplicationsKexin
Kexin
2SB1201Silicon PNP Power TransistorInchange Semiconductor
Inchange Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск