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34167T PDF даташит

Спецификация 34167T изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую « MC34167».

Детали детали

Номер произв 34167T
Описание MC34167
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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34167T Даташит, Описание, Даташиты
MC34167, MC33167
5.0 A, Step−Up/Down/
Inverting Switching
Regulators
The MC34167, MC33167 series are high performance fixed
frequency power switching regulators that contain the primary
functions required for dc−to−dc converters. This series was
specifically designed to be incorporated in step−down and
voltage−inverting configurations with a minimum number of external
components and can also be used cost effectively in step−up
applications.
These devices consist of an internal temperature compensated
reference, fixed frequency oscillator with on−chip timing components,
latching pulse width modulator for single pulse metering, high gain
error amplifier, and a high current output switch.
Protective features consist of cycle−by−cycle current limiting,
undervoltage lockout, and thermal shutdown. Also included is a low
power standby mode that reduces power supply current to 36 mA.
Features
Output Switch Current in Excess of 5.0 A
Fixed Frequency Oscillator (72 kHz) with On−Chip Timing
Provides 5.05 V Output without External Resistor Divider
Precision 2% Reference
0% to 95% Output Duty Cycle
Cycle−by−Cycle Current Limiting
Undervoltage Lockout with Hysteresis
Internal Thermal Shutdown
Operation from 7.5 V to 40 V
Standby Mode Reduces Power Supply Current to 36 mA
Economical 5−Lead TO−220 Package with Two Optional Leadforms
Also Available in Surface Mount D2PAK Package
Moisture Sensitivity Level (MSL) Equals 1
Pb−Free Packages are Available
ILIMIT
Vin
4
Oscillator
PWM
Thermal
S
Q
R
UVLO
Reference
EA
2
1
35
This device contains 143 active transistors.
Figure 1. Simplified Block Diagram
www.DataSheet4U(.SctoepmDown Application)
L
VO
5.05 V/
5.0 A
http://onsemi.com
MARKING
DIAGRAMS
1
5
TO−220
TH SUFFIX
CASE 314A
MC
3x167T
AWLYWWG
Heatsink surface connected to Pin 3
1
5
TO−220
TV SUFFIX
CASE 314B
MC
3x167T
AWLYWWG
TO−220
1
T SUFFIX
CASE 314D
5
Pin 1. Voltage Feedback Input
2. Switch Output
3. Ground
4. Input Voltage/VCC
5. Compensation/Standby
MC
3x167T
AWLYWWG
D2PAK
MC
1
D2T SUFFIX
CASE 936A
3x167T
AWLYWWG
5
Heatsink surface (shown as
terminal 6 in case outline
1
drawing) is connected to Pin 3
5
x = 3 or 4
A = Assembly Location
WL = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 7
1
Publication Order Number:
MC34167/D









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34167T Даташит, Описание, Даташиты
MC34167, MC33167
MAXIMUM RATINGS (Note 1 and 2)
Rating
Symbol
Value
Unit
Power Supply Input Voltage
Switch Output Voltage Range
Voltage Feedback and Compensation Input Voltage Range
Power Dissipation
Case 314A, 314B and 314D (TA = +25°C)
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Case 936A (D2PAK) (TA = +25°C)
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Operating Junction Temperature
Operating Ambient Temperature (Note 3)
MC34167
MC33167
VCC
VO(switch)
VFB, VComp
PD
qJA
qJC
PD
qJA
qJC
TJ
TA
40
−2.0 to + Vin
−1.0 to + 7.0
Internally Limited
65
5.0
Internally Limited
70
5.0
+150
0 to + 70
− 40 to + 85
V
V
V
W
°C/W
°C/W
W
°C/W
°C/W
°C
°C
Storage Temperature Range
Tstg
− 65 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Maximum package power dissipation limits must be observed to prevent thermal shutdown activation.
2. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015.
Machine Model Method 200 V.
3. Tlow = 0°C for MC34167
= − 40°C for MC33167
Thigh = + 70°C for MC34167
= + 85°C for MC33167
http://onsemi.com
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34167T Даташит, Описание, Даташиты
MC34167, MC33167
ELECTRICAL CHARACTERISTICS (VCC = 12 V, for typical values TA = +25°C, for min/max values TA is the operating ambient
temperature range that applies (Notes 4, 5), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OSCILLATOR
Frequency (VCC = 7.5 V to 40 V)
TA = +25°C
TA = Tlow to Thigh
fOSC
65
62
72
79 kHz
81
ERROR AMPLIFIER
Voltage Feedback Input Threshold
TA =+ 25°C
TA = Tlow to Thigh
VFB(th)
4.95
4.85
5.05
5.15
5.20
Line Regulation (VCC = 7.5 V to 40 V, TA = +25°C)
Input Bias Current (VFB = VFB(th) + 0.15 V)
Power Supply Rejection Ratio (VCC = 10 V to 20 V, f = 120 Hz)
Output Voltage Swing High State (ISource = 75 mA, VFB = 4.5 V)
Low State (ISink = 0.4 mA, VFB = 5.5 V)
Regline
IIB
PSRR
VOH
VOL
60
4.2
0.03
0.15
80
4.9
1.6
0.078
1.0
1.9
PWM COMPARATOR
Duty Cycle (VCC = 20 V)
Maximum (VFB = 0 V)
Minimum (VComp = 1.9 V)
DC(max)
DC(min)
92
0
95
0
100
0
SWITCH OUTPUT
Output Voltage Source Saturation (VCC = 7.5 V, ISource = 5.0 A)
Off−State Leakage (VCC = 40 V, Pin 2 = GND)
Current Limit Threshold (VCC = 7.5 V)
Switching Times (VCC = 40 V, Ipk = 5.0 A, L = 225 mH, TA = +25°C)
Output Voltage Rise Time
Output Voltage Fall Time
Vsat
Isw(off)
Ipk(switch)
tr
tf
− (VCC −1.5) (VCC −1.8)
− 0 100
5.5 6.5
8.0
− 100 200
− 50 100
UNDERVOLTAGE LOCKOUT
Startup Threshold (VCC Increasing, TA = +25°C)
Hysteresis (VCC Decreasing, TA = +25°C)
Vth(UVLO)
VH(UVLO)
5.5
0.6
5.9
0.9
6.3
1.2
TOTAL DEVICE
Power Supply Current (TA = +25°C )
ICC
Standby (VCC = 12 V, VComp < 0.15 V)
− 36 100
Operating (VCC = 40 V, Pin 1 = GND for maximum duty cycle)
− 40
60
4. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
5. Tlow = 0°C for MC34167
= − 40°C for MC33167
Thigh = + 70°C for MC34167
= + 85°C for MC33167
V
%/V
mA
dB
V
%
V
mA
A
ns
V
V
mA
mA
http://onsemi.com
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34167T MC34167ON Semiconductor
ON Semiconductor

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