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PDF AD003B-9-TO5I Data sheet ( Hoja de datos )
| Número de pieza | AD003B-9-TO5I | |
| Descripción | Pacific Silicon Sensor | |
| Fabricantes | Pacific Silicon Sensor | |
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Pacific Silicon Sensor Series 9 Data Sheet
Part Description AD003B-9-TO5i
Order # 06-087
ACTIVE AREA: 0.33 mm2
(1.10 mm X 0.30 mm )
Ø9.1
Ø6.35 120°
VIEWING
Ø8.13
ANGLE
FRONTSIDE VIEW
3.2
1.90
Ø0.45
3 PL
ANODE
PIN 1
CATHODE
PIN 2
13.2 MIN
3 PL
CASE
PIN 3
Ø5.08
PIN CIRCLE
BACKSIDE VIEW
FEATURES
• 1.10 mm X 0.30 mm active area
• Low slope multiplication curve
• High speed, low noise
• NIR enhanced
DESCRIPTION
0.33 mm2 High Speed, Low Noise Avalanche Photodiode
with N on P construction. Hermetically packaged in a
TO-5 with a clear borosilicate glass window cap.
APPLICATIONS
• High speed optical
communications
• Laser range finder
• Medical equipment
• High speed photometry
SC
ABSOLUTE MAXIMUM RATING
SYMBOL PARAMETER MIN
TSTG
TOP
TSOLDERING
Storage Temp
Operating Temp
Soldering Temp
10 seconds
-60
-20
Electrical Power
Dissipation @ 22°C
Optical Peak Value,
once for 1 second
-
-
IPH (DC)
Continuous Optical
Operation
-
IPH (AC)
Pulsed Signal Input
50 µs “on” / 1 ms “off”
-
MAX
+100
+70
+260
100
200
250
1
UNITS
°C
°C
°C
mW
mW
µA
mA
SPECTRAL RESPONSE at M = 100
70
60
50
40
30
20
10
0
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN TYP MAX UNITS
ID Dark Current
C Capacitance
M = 100*
M = 100*
--- 2.0 6.0 nA
--- 2.0 --- pF
VBR Breakdown Voltage
ID = 2 µA
Temperature Coefficient of VBR
Responsivity
M = 100; = 0 V; λ = 905 nm
120 200 --- V
--- 1.55 --- V/K
55 60 --- A/W
∆ƒ3dB
Bandwidth
-3dB
--- 0.35 --- GHz
tr Rise Time
M = 100
--- 1.0 --- ns
Optimum Gain
50 60 ---
“Excess Noise” factor
M = 100
--- 2.5 ---
“Excess Noise” index
M = 100
--- 0.2 ---
Noise Current
M = 100
---
0.75
--- pA/Hz1/2
Max Gain
200 --- ---
NEP
Noise Equivalent Power
M = 100; λ = 905 nm
---
3.0 X 10-14
--- W/Hz1/2
* Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 1 µA, (M = 100) by internal multiplication due to an increasing bias voltage.
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
12/22/2009
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