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BGA2870 PDF даташит

Спецификация BGA2870 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «MMIC wideband amplifier».

Детали детали

Номер произв BGA2870
Описание MMIC wideband amplifier
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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BGA2870 Даташит, Описание, Даташиты
BGA2870
MMIC wideband amplifier
Rev. 2 — 29 April 2011
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
„ Internally matched to 50 Ω
„ A gain of 31.1 dB at 500 MHz
„ Output power at 1 dB gain compression = 4 dBm
„ Supply current = 16.0 mA at a supply voltage of 2.5 V
„ Reverse isolation > 52 dB up to 750 MHz
„ Good linearity with low second order and third order products
„ Noise figure = 3.2 dB at 500 MHz
„ Unconditionally stable (K > 1)
„ No output inductor required
1.3 Applications
„ LNB IF amplifiers
„ General purpose low noise wideband amplifier for frequencies between
DC and 750 MHz
2. Pinning information
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Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052









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BGA2870 Даташит, Описание, Даташиты
NXP Semiconductors
BGA2870
MMIC wideband amplifier
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BGA2870
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 3. Marking
Type number
BGA2870
Marking code
YC*
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
ICC
Ptot
Tstg
Tj
Pdrive
supply voltage
supply current
total power dissipation
storage temperature
junction temperature
drive power
RF input AC coupled
Tsp = 90 °C
Min Max Unit
0.5 3.6 V
- 55 mA
- 200 mW
40 +125 °C
- 125 °C
- 16.5 dBm
6. Thermal characteristics
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Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 °C
solder point
Typ Unit
300 K/W
7. Characteristics
Table 6. Characteristics
VCC = 2.5 V; ZS = ZL = 50 Ω; Pi = 30 dBm; Tamb = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
VCC supply voltage
ICC supply current
2.3 2.5 2.7
13.5 16.0 17.1
Unit
V
mA
BGA2870
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 18









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BGA2870 Даташит, Описание, Даташиты
NXP Semiconductors
BGA2870
MMIC wideband amplifier
Table 6. Characteristics …continued
VCC = 2.5 V; ZS = ZL = 50 Ω; Pi = 30 dBm; Tamb = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Gp power gain
f = 250 MHz
f = 500 MHz
30.6 31.2 31.8
30.5 31.1 31.7
f = 750 MHz
30.3 31.0 31.7
RLin input return loss
f = 250 MHz
f = 500 MHz
25 27 29
20 22 24
f = 750 MHz
15 16 18
RLout output return loss
f = 250 MHz
f = 500 MHz
12 17 21
12 17 21
f = 750 MHz
14 15 16
ISL isolation
f = 250 MHz
50 70 91
f = 500 MHz
40 60 80
f = 750 MHz
51 52 105
NF noise figure
f = 250 MHz
2.6 3.1 3.6
f = 500 MHz
2.8 3.2 3.7
f = 750 MHz
3.3 3.7 4.1
B3dB
K
3 dB bandwidth
Rollett stability factor
3 dB below gain at 1 GHz
f = 250 MHz
1.9 2.1 2.3
29 44 60
f = 500 MHz
9 14 18
f = 750 MHz
567
PL(sat) saturated output power
f = 250 MHz
f = 500 MHz
556
445
f = 750 MHz
345
PL(1dB) output power at 1 dB gain compression f = 250 MHz
f = 500 MHz
455
345
f = 750 MHz
245
IP3I input third-order intercept point
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IP3O output third-order intercept point
PL(2H) second harmonic output power
ΔIM2 second-order intermodulation distance
Pdrive = 35 dBm (for each tone)
f1 = 250 MHz; f2 = 251 MHz
f1 = 500 MHz; f2 = 501 MHz
f1 = 750 MHz; f2 = 751 MHz
Pdrive = 35 dBm (for each tone)
f1 = 250 MHz; f2 = 251 MHz
f1 = 500 MHz; f2 = 501 MHz
f1 = 750 MHz; f2 = 751 MHz
Pdrive = 35 dBm
f1H = 250 MHz; f2H = 500 MHz
f1H = 500 MHz; f2H = 1900 MHz
Pdrive = 35 dBm (for each tone)
f1 = 250 MHz; f2 = 251 MHz
f1 = 500 MHz; f2 = 501 MHz
18 16 14
19 17 15
20 18 16
13 15 17
12 14 16
11 13 15
38 36 34
38 36 34
25 27 29
22 24 26
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBc
dBc
BGA2870
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 April 2011
© NXP B.V. 2011. All rights reserved.
3 of 18










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