8N80 PDF даташит
Спецификация 8N80 изготовлена «Unisonic Technologies» и имеет функцию, называемую «800V N-CHANNEL MOSFET». |
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Детали детали
Номер произв | 8N80 |
Описание | 800V N-CHANNEL MOSFET |
Производители | Unisonic Technologies |
логотип |
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UNISONIC TECHNOLOGIES CO., LTD
8N80
8A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 8N80 is generally applied in high efficiency switch mode
power supplies.
FEATURES
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45Ω @VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Copyright © 2013 Unisonic Technologies Co., Ltd
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8N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 800 V
Gate-Source Voltage
VGSS ±30 V
Drain Current (Continuous) (TC=25°C)
ID
8A
Drain Current (Pulsed) (Note 1)
IDM 32 A
Avalanche Current (Note 1)
IAR 8 A
Single Pulse Avalanche Energy (Note 2)
EAS
850 mJ
Repetitive Avalanche Energy (Note 1)
EAR 17.8 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
TO-220
178
Power Dissipation
TO-220F/TO-220F1
59 W
Linear Derating Factor above
TC=25°C
TO-220F2
TO-220
TO-220F/TO-220F1
TO-220F2
PD
62
1.43
0.47 W/°C
0.5
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.7
2.1
2.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
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8N80
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
Gate- Source Leakage Current
IGSS VGS=±30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4A
Forward Transconductance (Note 1)
gFS VDS=50V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=640V,
ID=8A
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=400V, ID=8A,
RG=25Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=8A, VGS=0V
Reverse Recovery Time (Note 1)
trr IS=8A, VGS=0V,
Reverse Recovery Charge (Note 1)
QRR dIF/dt=100A/µs
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800 V
0.5 V/°C
10
100
µA
±100 nA
3.0 5.0
1.18 1.45
5.6
V
Ω
S
1580 2050
135 175
13 17
pF
pF
pF
35 45
10
14
40 90
110 230
65 140
70 150
nC
nC
nC
ns
ns
ns
ns
8A
32
1.4
690
8.2
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
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