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DN0150BLP4 PDF даташит

Спецификация DN0150BLP4 изготовлена ​​​​«Diodes Incorporated» и имеет функцию, называемую «NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR».

Детали детали

Номер произв DN0150BLP4
Описание NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Производители Diodes Incorporated
логотип Diodes Incorporated логотип 

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DN0150BLP4 Даташит, Описание, Даташиты
Features
Epitaxial Die Construction
Ultra-Small Leadless Surface Mount Package
Ultra Low Profile (0.4mm max)
Complementary PNP Type Available (DP0150ALP4 /
DP0150BLP4)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q 101 Standards for High Reliability
DN0150ALP4 / DN0150BLP4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections Indicator: Collector Dot
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Ordering Information: See Page 3
Marking Information: See Page 3
Weight: 0.0008 grams (approximate)
Bottom View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Peak Pulse Collector Current
Base Current
1 3E
C
2B
Top View
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
60
50
5
100
200
30
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
450
278
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
DN0150ADJ
DN0150BDJ
www.DSaMtAaSLhLeSeItG4UNA.cLomCHARACTERISTICS
Transition Frequency
Output Capactiance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
60
50
5
120
200
fT 60
Cob
Typ
0.10
1.3
Max
0.1
0.1
0.25
240
400
Unit Test Condition
V IC = 10μA, IE = 0
V IC = 1mA, IB = 0
V IE = 10μA, IC = 0
μA VCB = 60V, IE = 0
μA VEB = 5V, IC = 0
V IC = 100mA, IB = 10mA
— VCE = 6V, IC = 2mA
MHz
pF
VCE = 10V, IE = -1mA
f = 30MHz
VCB = 10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated









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DN0150BLP4 Даташит, Описание, Даташиты
600
500
400
300
200
100
RθJA = 278°C/W
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
1,000
TA = 150°C
TA = 85°C
TA = 25°C
VCE = 6V
100
TA = -55°C
DN0150ALP4 / DN0150BLP4
0.20
0.15
0.10
0.05
IB = 2mA
IB = 3mA
IB = 4mA
IB = 5mA
IB = 1mA
0
01 2 3 45
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (DN0150BLP4)
1
IC/IB = 10
0.1 TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10
0.1
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
vs. Collector Current (DN0150BLP4)
1.2
IC/IB = 10
1.0
1,000
0.01
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
VCE = 6V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
www.DataSheet04.U4 .cTAom= 85°C
0.2 TA = 150°C
0
0.0001 0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
2 of 4
www.diodes.com
July 2009
© Diodes Incorporated









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DN0150BLP4 Даташит, Описание, Даташиты
100
f = 1MHz
10
Cibo
1
Cobo
0
0.1 1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DN0150ALP4 / DN0150BLP4
320
280
240
200
160
120
80
40 VCE = 6V
f = 30MHz
0
02 4 6 8
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
10
Ordering Information (Note 5)
Notes:
Device
DN0150ALP4-7
DN0150BLP4-7
Packaging
DFN1006H4-3
DFN1006H4-3
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
3000/Tape & Reel
3000/Tape & Reel
Marking Information
DFN1006H4-3 Taping orientation
xx= Product Type Marking Code:
xx
T3 = DN0150ALP4
T4 = DN0150BLP4
Dot Denotes Collector Side
Direction of feed
Package Outline Dimensions
A
www.DataSheet4U.com
A1
D
E b2
L2 L3
DN0150ALP4 / DN0150BLP4
Document number: DS31492 Rev. 3 - 2
L1
b1
e
DFN1006H4-3
Dim Min Max Typ
A 0.40
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
3 of 4
www.diodes.com
July 2009
© Diodes Incorporated










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DN0150BLP4NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORDiodes Incorporated
Diodes Incorporated

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