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7N60Z PDF даташит

Спецификация 7N60Z изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL MOSFET».

Детали детали

Номер произв 7N60Z
Описание N-CHANNEL MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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7N60Z Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
7N60Z
7.4A, 600V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 7N60Z is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1@VGS = 10 V
* Ultra Low Gate Charge (Typical 29 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 16pF )
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1
1
Power MOSFET
TO-220
TO-220F1
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60ZL-TA3-T
7N60ZG-TA3-T
7N60ZL-TF1-T
7N60ZG-TF1-T
7N60ZL-TQ2-T
7N60ZG-TQ2-T
7N60ZL-TQ2-R
7N60ZG-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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7N60Z Даташит, Описание, Даташиты
7N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current (Note 2)
IAR 7.4 A
Continuous Drain Current
ID 7.4 A
Pulsed Drain Current (Note 1)
IDM 29.6 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
600 mJ
14.2 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
TO-220/ TO-263
TO-220F1
PD
142 W
48 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 7.4A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/ TO-263
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
0.88
2.6
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N60Z Даташит, Описание, Даташиты
7N60Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS VDS = 600V, VGS = 0V
1 μA
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
10 μA
-10 μA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID =250μA,Referenced to 25°C
0.67
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.7A
2.0 4.0
0.83 1
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0 MHz
1400 pF
180 pF
16 21 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD =300V, ID =7.4A,
RG =25(Note 1, 2)
VDS=480V, ID=7.4A,
VGS=10 V (Note 1, 2)
70
170
140
130
29 38
7
14.5
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
1.4 V
7.4 A
29.6 A
Reverse Recovery Time
trr VGS = 0V, IS = 7.4 A,
Reverse Recovery Charge
QRR dIF / dt = 100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width300μs, Duty cycle 2%
2. Essentially independent of operating temperature
320 ns
2.4 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-349.E










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