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2DA2018 PDF даташит

Спецификация 2DA2018 изготовлена ​​​​«Diodes» и имеет функцию, называемую «12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR».

Детали детали

Номер произв 2DA2018
Описание 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Производители Diodes
логотип Diodes логотип 

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2DA2018 Даташит, Описание, Даташиты
Features
Low Collector-Emitter Saturation Voltage, VCE(sat)
Ultra-Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Applications
DC-DC converter
Portable equipments
Power management units
2DA2018
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
SOT-523
C
B
C
Top View
E
Device Symbol
BE
Top View
Pin Configuration
Ordering Information (Note 3)
Product
2DA2018-7
Marking
KTF
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Tape width (mm)
8mm
Quantity per reel
3,000
Marking Information
KTF YM
KTF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
www.DDaattaeSChoeedte4KUe.ycom
Year
2009
Code
W
Month
Code
Jan
1
2010
X
Feb Mar
23
2011
Y
Apr
4
2012
Z
May Jun
56
2013
A
2014
B
Jul Aug Sep
78
9
2015
C
2015
C
Oct Nov Dec
OND
2DA2018
Document number: DS31823 Rev. 3 - 2
1 of 5
www.diodes.com
October 2010
© Diodes Incorporated









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2DA2018 Даташит, Описание, Даташиты
2DA2018
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
VCBO
VCEO
VEBO
IC
ICM
Symbol
PD
RθJA
TJ, TSTG
Value
-15
-12
-6
-500
-1
Value
150
833
-55 to +150
Unit
V
V
V
mA
A
Unit
mW
°C/W
°C
160
140
120
100
80
60
40
20 RθJA = 833°C/W
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
100
80
60
Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 470°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
40
20
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0.1 D = 0.1
D = 0.05
D = 0.02
www.DataSheet4U.com 0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 470°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01
0.1 1 10
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
100 1,000
2DA2018
Document number: DS31823 Rev. 3 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated









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2DA2018 Даташит, Описание, Даташиты
2DA2018
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min
-15
-12
-6
Collector Cutoff Current
ICBO
Emitter Cutoff Current
DC Current Gain (Note 5)
Collector-Emitter Saturation Voltage (Note 5)
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
IEBO
hFE
VCE(sat)
Cobo
fT
ton
td
tr
toff
ts
tf
270
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Typ Max
⎯⎯
⎯⎯
⎯⎯
-100
-50
-100
680
-250
7.4
260
40
18
22
106
87
19
1.2 800
Unit
V
V
V
nA
μA
nA
mV
pF
MHz
ns
ns
ns
ns
ns
ns
Test Condition
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -15V, IE = 0
VCB = -15V, IE = 0, TA = 150°C
VEB = -6V, IC = 0
VCE = -2V, IC = -10mA
IC = -200mA, IB = -10mA
VCB = -10V, f = 1.0MHz
VCE = -2V, IC = -10mA, f = 100MHz
VCC = -6V
IC = -200mA, IB1 = IB2 = -10mA
IB = 5mA
700
1.0
IB = 4mA
600
0.8
IB = 3mA
500
TA = 125°C
TA = 85°C
0.6
IB = 2mA
400
300
TA = 25°C
0.4
IB = 1mA
200
0.2 TA = -55°C
100
0
0 2 4 6 8 10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0.1
IC/IB = 10
0
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1.0
VCE = 2V
0.8
0.01
www.DataSheet4U.com
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2 TA = 125°C
TA = 150°C
0.001
0.01 0.1 1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
2DA2018
Document number: DS31823 Rev. 3 - 2
3 of 5
www.diodes.com
0
0.01 0.1 1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
October 2010
© Diodes Incorporated










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