DataSheet26.com

NST847BF3T5G PDF даташит

Спецификация NST847BF3T5G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «NPN General Purpose Transistor».

Детали детали

Номер произв NST847BF3T5G
Описание NPN General Purpose Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

4 Pages
scroll

No Preview Available !

NST847BF3T5G Даташит, Описание, Даташиты
NST847BF3T5G
NPN General Purpose
Transistor
The NST847BF3T5G device is a spinoff of our popular
SOT23/SOT323/SOT563/SOT963 threeleaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT1123 surface mount package. This device is ideal for
lowpower surface mount applications where board space is at a
premium.
Features
hFE, 200450
Low VCE(sat), 0.25 V
Reduces Board Space
This is a PbFree Device
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
6.0
100
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient
Symbol
PD
(Note 1)
RqJA
(Note 1)
PD
(Note 2)
RqJA
(Note 2)
Max
290
2.3
432
347
2.8
360
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
Thermal Resistance,
JunctiontoLead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
www.DataSheet4U.com
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
NST847BF3T5G
3
12
SOT1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
4M
4 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NST847BF3T5G
SOT1123 8000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
April, 2008 Rev. 0
1
Publication Order Number:
NST847BF3/D









No Preview Available !

NST847BF3T5G Даташит, Описание, Даташиты
NST847BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA)
Collector Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector Base Breakdown Voltage (IC = 10 mA)
Emitter Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CEO
45
V
V(BR)CES
50
V
V(BR)CBO
50
V
V(BR)EBO
6.0
V
ICBO
15 nA
5.0 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
150
200 290 450
VCE(sat)
0.25
0.6
VBE(sat)
0.7
0.9
V
V
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
− − 770
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT 100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Cobo
Cibo
NF
4.5 pF
10 pF
10 dB
0.18
0.16
IC/IB = 10
0.14
0.12
0.10
VCE(sat) = 150°C
0.08 25°C
0.06
0.04 55°C
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
200 55°C (5.0 V)
100 55°C (1.0 V)
0
0.0001
0.001
0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
www.DataSheet4U.com
http://onsemi.com
2









No Preview Available !

NST847BF3T5G Даташит, Описание, Даташиты
NST847BF3T5G
1.0
IC/IB = 10
0.9
0.8 55°C
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
30 mA
10 mA
0.0001
IC = 100 mA
50 mA
0.001
0.01
Ib, BASE CURRENT (A)
Figure 5. Saturation Region
1.0
VCE = 2.0 V
0.9
0.8 55°C
0.7
0.6 25°C
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter TurnOn Voltage vs.
Collector Current
7.0
6.5
6.0
5.5
5.0
4.5 Cib
4.0
3.5
3.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
www.DataSheet4U.com
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0
Cob
5 10 15 20 25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
30
http://onsemi.com
3










Скачать PDF:

[ NST847BF3T5G.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NST847BF3T5GNPN General Purpose TransistorON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск