NST847BF3T5G PDF даташит
Спецификация NST847BF3T5G изготовлена «ON Semiconductor» и имеет функцию, называемую «NPN General Purpose Transistor». |
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Детали детали
Номер произв | NST847BF3T5G |
Описание | NPN General Purpose Transistor |
Производители | ON Semiconductor |
логотип |
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NST847BF3T5G
NPN General Purpose
Transistor
The NST847BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
Features
• hFE, 200−450
• Low VCE(sat), ≤ 0.25 V
• Reduces Board Space
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
6.0
100
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Symbol
PD
(Note 1)
RqJA
(Note 1)
PD
(Note 2)
RqJA
(Note 2)
Max
290
2.3
432
347
2.8
360
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
Thermal Resistance,
Junction−to−Lead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
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COLLECTOR
3
1
BASE
2
EMITTER
NST847BF3T5G
3
12
SOT−1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
4M
4 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NST847BF3T5G
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
April, 2008 − Rev. 0
1
Publication Order Number:
NST847BF3/D
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NST847BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mA)
Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector −Base Breakdown Voltage (IC = 10 mA)
Emitter −Base Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
V(BR)CEO
45
−
−
V
V(BR)CES
50
−
−
V
V(BR)CBO
50
−
−
V
V(BR)EBO
6.0
−
−
V
ICBO
−
−
− 15 nA
− 5.0 mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
− 150 −
200 290 450
VCE(sat)
−
−
− 0.25
− 0.6
VBE(sat)
−
0.7
−
− 0.9 −
−
V
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
− − 770
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT 100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Cobo
Cibo
NF
−
−
−
− 4.5 pF
− 10 pF
− 10 dB
0.18
0.16
IC/IB = 10
0.14
0.12
0.10
VCE(sat) = 150°C
0.08 25°C
0.06
0.04 −55°C
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
200 −55°C (5.0 V)
100 −55°C (1.0 V)
0
0.0001
0.001
0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
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NST847BF3T5G
1.0
IC/IB = 10
0.9
0.8 −55°C
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
30 mA
10 mA
0.0001
IC = 100 mA
50 mA
0.001
0.01
Ib, BASE CURRENT (A)
Figure 5. Saturation Region
1.0
VCE = 2.0 V
0.9
0.8 −55°C
0.7
0.6 25°C
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
7.0
6.5
6.0
5.5
5.0
4.5 Cib
4.0
3.5
3.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
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2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0
Cob
5 10 15 20 25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
30
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NST847BF3T5G | NPN General Purpose Transistor | ON Semiconductor |
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