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NST846BF3T5G PDF даташит

Спецификация NST846BF3T5G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «NPN General Purpose Transistor».

Детали детали

Номер произв NST846BF3T5G
Описание NPN General Purpose Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NST846BF3T5G Даташит, Описание, Даташиты
NST846BF3T5G
NPN General Purpose
Transistor
The NST846BF3T5G device is a spinoff of our popular
SOT23/SOT323/SOT563 threeleaded device. It is designed for
general purpose amplifier applications and is housed in the SOT1123
surface mount package. This device is ideal for lowpower surface
mount applications where board space is at a premium.
Features
hFE, 200450
Low VCE(sat), 0.25 V
Reduces Board Space
This is a HalideFree Device
This is a PbFree Device
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Base Voltage
EmitterBase Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
65
80
6.0
100
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol Max
Unit
PD 290 mW
(Note 1) 2.3 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 347 mW
(Note 2) 2.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
JunctiontoLead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
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COLLECTOR
3
1
BASE
2
EMITTER
NST846BF3T5G
3
12
SOT1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
VM
V = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NST846BF3T5G
SOT1123 8000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
January, 2009 Rev. 0
1
Publication Order Number:
NST846BF3/D









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NST846BF3T5G Даташит, Описание, Даташиты
NST846BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA)
Collector Emitter Breakdown Voltage (IC = 10 mA, VEB = 0)
Collector Base Breakdown Voltage (IC = 10 mA)
EmitterBase Breakdown Voltage (IE = 1.0 mA)
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
V(BR)CEO
65
V
V(BR)CES
80
V
V(BR)CBO
80
V
V(BR)EBO
6.0
V
ICBO − − 15 nA
− − 5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
hFE
150
200 290 450
VCE(sat)
0.25
0.6
VBE(sat)
0.7
0.9
V
V
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
− − 770
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT 100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Cobo − − 4.5 pF
Cibo − − 10 pF
NF − − 10 dB
0.18
0.16
IC/IB = 10
0.14
0.12
0.10
VCE(sat) = 150°C
0.08 25°C
0.06
0.04 55°C
0.02
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
500
150°C (1.0 V)
400
25°C (5.0 V)
300
25°C (1.0 V)
200 55°C (5.0 V)
100 55°C (1.0 V)
0
0.0001
0.001
0.01 0.1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
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NST846BF3T5G Даташит, Описание, Даташиты
NST846BF3T5G
1.0
IC/IB = 10
0.9
0.8 55°C
0.7
25°C
0.6
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.00001
IC = 100 mA
50 mA
30 mA
10 mA
0.0001
0.001
Ib, BASE CURRENT (A)
Figure 5. Saturation Region
0.01
1.0
VCE = 2.0 V
0.9
0.8 55°C
0.7
0.6 25°C
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter TurnOn Voltage vs.
Collector Current
7.0
6.5
6.0
5.5
5.0
4.5 Cib
4.0
3.5
3.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Veb, EMITTER BASE VOLTAGE (V)
Figure 6. Input Capacitance
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2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0
Cob
5 10 15 20 25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
30
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Номер в каталогеОписаниеПроизводители
NST846BF3T5GNPN General Purpose TransistorON Semiconductor
ON Semiconductor

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