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PDF NSS40302PDR2G Data sheet ( Hoja de datos )

Número de pieza NSS40302PDR2G
Descripción Complementary 40 V 6.0 A / Low VCE(sat) Transistor
Fabricantes ON Semiconductor 
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NSS40302PDR2G
Complementary 40 V, 6.0 A,
Low VCE(sat) Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
Halide Free
This is a PbFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage
NPN
PNP
VCEO
40 Vdc
40
Collector-Base Voltage
NPN
PNP
VCBO
40 Vdc
40
Emitter-Base Voltage
NPN
PNP
VEBO
6.0 Vdc
7.0
Collector Current Continuous NPN
PNP
IC
3.0 A
3.0
Collector Current Peak
NPN
PNP
ICM
6.0 A
6.0
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLTS, 6.0 AMPS
COMPLEMENTARY LOW
VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
7,8
COLLECTOR
5,6
2
BASE
4
BASE
1
EMITTER
3
EMITTER
8
1
SOIC8
CASE 751
STYLE 16
DEVICE MARKING
8
C40302
AYWWG
G
1
C40302 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
www.DataSheet4U.com
© Semiconductor Components Industries, LLC, 2008
September, 2008 Rev. 0
ORDERING INFORMATION
Device
Package
Shipping
NSS40302PDR2G SOIC8
(PbFree)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
NSS40302P/D

1 page




NSS40302PDR2G pdf
NSS40302PDR2G
NPN TYPICAL CHARACTERISTICS
0.16
0.14 IC/IB = 10
0.12
150°C
25°C
0.10
55°C
0.08
0.06
0.04
0.02
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
10
700
600 150°C (2.0 V)
150°C (5.0 V)
500
25°C (5.0 V)
400 25°C (2.0 V)
300
55°C (5.0 V)
200 55°C (2.0 V)
100
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
10
1.0
0.9 VCE = +2.0 V
0.8
55°C
0.7 25°C
0.6
0.5
0.4 150°C
0.3
www.DataSh0e.e2t4U.com
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter TurnOn Voltage vs.
Collector Current
10
0.30
0.25
IC/IB = 100
0.20
150°C
0.15
25°C
0.10
55°C
0.05
0
0.001
0.01
0.1
1 10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9 IC/IB = 10
0.8
55°C
0.7 25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8 100 mA
1A 2A
3A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.001
0.01
Ib, BASE CURRENT (A)
Figure 6. Saturation Region
0.1
http://onsemi.com
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