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B647 PDF даташит

Спецификация B647 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SB647».

Детали детали

Номер произв B647
Описание PNP Transistor - 2SB647
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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B647 Даташит, Описание, Даташиты
2SB647, 2SB647A
Silicon PNP Epitaxial
Application
Low frequency power amplifier
Complementary pair with 2SD667/A
Outline
TO-92MOD
3
2
1
1. Emitter
2. Collector
3. Base
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B647 Даташит, Описание, Даташиты
2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
2SB647
–120
–80
–5
–1
–2
0.9
150
–55 to +150
2SB647A
–120
–100
–5
–1
–2
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
2SB647
2SB647A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO –120 — — –120 — — V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO –80 — — –100 — — V
IC = –1 mA, RBE =
Emitter to base breakdown V(BR)EBO –5 — — –5 — — V
voltage
IE = –10 µA, IC = 0
Collector cutoff current
DC current transfer ratio
I CBO
hFE1*1
60
hFE2
30
Collector to emitter
saturation voltage
Base to emitter voltage
VCE(sat)
VBE
Gain bandwidth product fT
Collector output capacitance Cob
— –10 —
— 320 60
— — 30
— –1 —
— –1.5 —
140 —
20 —
— –10 µA VCB = –100 V, IE = 0
— 200
VCE = –5 V,
IC = –150 mA*2
——
VCE = –5 V,
IC = –500 mA*2
— –1 V
IC = –500 mA,
IB = –50 mA*2
— –1.5 V
VCE = –5 V,
IC = –150 mA*2
140 — MHz VCE = –5 V, IC = –150 mA
20 — pF VCB = –10 V, IE = 0
f = 1 MHz
wNwowte.sD: at1a.ShTeheet42US.cBo6m47 and 2SB647A are grouped by hFE1 as follows.
2. Pulse test
BC D
2SB647
60 to 120 100 to 200 160 to 320
2SB647A 60 to 120 100 to 200 —
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B647 Даташит, Описание, Даташиты
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0 50 100 150
Ambient Tmperature Ta (°C)
–500
–200
–100
Typical Transfer Characteristics
VCE = –5 V
Pulse
–50
–20
–10
–5
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
2SB647, 2SB647A
Typical Output Characteristics
–1.0
–120
–100
–0.8 –80
–60
–0.6 –4–030–20
–0.4 –10–5–2
–0.2
0
PC = 0.9 W
–1
–0.5mA
IB = 0
–2 –4 –6 –8 –10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
600
VCE = –5 V
Pulse
500
400
300 Ta = 75°C
25
200
–25
100
0
–1 –3 –10 –30 –100 –300 –1,000
Collector Current IC (mA)
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