NTP13N10 PDF даташит
Спецификация NTP13N10 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTP13N10 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTP13N10
Preferred Device
Power MOSFET
13 A, 100 V, N−Channel
Enhancement−Mode TO−220
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA 25°C
− Continuous @ TA 100°C
− Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
100
100
"20
"30
13
8.0
39
64.7
0.43
Vdc
Vdc
Vdc
Adc
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Single Drain−to−Source Avalanche Energy −
Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 13 A, L = 1.0 mH, RG = 25 Ω)
EAS
mJ
85
Thermal Resistance
− Junction−to−Case
RθJC
°C/W
2.32
Maximum Lead Temperature for Soldering
TL 260 °C
Purposes, 1/8″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
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*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 6
1
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VDSS
100 V
RDS(ON) TYP
165 mΩ @ 10 V
N−Channel
D
ID MAX
13 A
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
12
3
TO−220AB
CASE 221A
STYLE 5
13N10
AYWW
1
Gate
3
Source
2
Drain
13N10
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTP13N10
TO−220AB
50 Units/Rail
NTP13N10G
TO−220AB
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NTP13N10/D
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NTP13N10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 6.5 Adc)
(VGS = 10 Vdc, ID = 6.5 Adc, TJ = 125°C)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 13 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 6.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 2 & 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 80 Vdc, ID = 13 Adc,
VGS = 10 Vdc, RG = 9.1 Ω)
Fall Time
Gate Charge
(VDS = 80 Vdc, ID = 13 Adc,
VGS = 10 Vdc)
BODY−DRAIN DIODE RATINGS (Note 2)
Forward On−Voltage
(IS = 13 Adc, VGS = 0 Vdc)
(IS = 13 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 13 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min Typ Max Unit
100 −
− 147
Vdc
−
− mV/°C
mAdc
− − 5.0
− − 50
− − ± 100 nAdc
Vdc
2.0 3.2 4.0
− −7.6 − mV/°C
Ω
− 0.130 0.165
− 0.250 0.400
Vdc
− 1.82 2.34
− 6.0 − mhos
−
390 550
pF
− 115 160
− 35 70
− 11 20 ns
− 40 80
− 20 40
− 36 70
− 14 20 nC
− 3.0 −
− 7.0 −
− 0.98 1.3 Vdc
− 0.88 −
− 85 − ns
− 60 −
− 28 −
− 0.3 − mC
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NTP13N10
26
24
VGS = 10 V
22 9 V
TJ = 25°C
20 8 V
18
16 7.5 V
14
7 V 6.5 V
6V
12
10 5.5 V
8
6 5V
4
2 4.5 V
0 0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
26
24 VDS ≥ 10 V
22
20
18
16
14
12
10
8
6
4
TJ = 25°C
2 TJ = 100°C TJ = −55°C
00 1 2 3 4 5 6 7 8 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
0.5
VGS = 10 V
0.4
0.3 TJ = 100°C
0.2 TJ = 25°C
0.1 TJ = −55°C
0.2
0.175
TJ = 25°C
0.15
0.125
VGS = 10 V
VGS = 15 V
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.1 0 2 4 6 8 10 12 14 16 18 20 22 24 26
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
3
ID = 6.5 A
2.5 VGS = 10 V
2
10,000 VGS = 0 V
1000
TJ = 150°C
1.5
1 100
0.5
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0
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
TJ = 100°C
10
20
30 40 50 60 70 80 90 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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