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NTP13N10 PDF даташит

Спецификация NTP13N10 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTP13N10
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP13N10 Даташит, Описание, Даташиты
NTP13N10
Preferred Device
Power MOSFET
13 A, 100 V, NChannel
EnhancementMode TO220
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
PbFree Package is Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
DraintoSource Voltage (RGS = 1.0 MΩ)
GatetoSource Voltage
Continuous
NonRepetitive (tpv10 ms)
Drain Current
Continuous @ TA 25°C
Continuous @ TA 100°C
Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
100
100
"20
"30
13
8.0
39
64.7
0.43
Vdc
Vdc
Vdc
Adc
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Single DraintoSource Avalanche Energy
Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 13 A, L = 1.0 mH, RG = 25 Ω)
EAS
mJ
85
Thermal Resistance
JunctiontoCase
RθJC
°C/W
2.32
Maximum Lead Temperature for Soldering
TL 260 °C
Purposes, 1/8from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
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*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 6
1
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VDSS
100 V
RDS(ON) TYP
165 mΩ @ 10 V
NChannel
D
ID MAX
13 A
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
12
3
TO220AB
CASE 221A
STYLE 5
13N10
AYWW
1
Gate
3
Source
2
Drain
13N10
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP13N10
TO220AB
50 Units/Rail
NTP13N10G
TO220AB
(PbFree)
50 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NTP13N10/D









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NTP13N10 Даташит, Описание, Даташиты
NTP13N10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static DraintoSource OnState Resistance
(VGS = 10 Vdc, ID = 6.5 Adc)
(VGS = 10 Vdc, ID = 6.5 Adc, TJ = 125°C)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 13 Adc)
Forward Transconductance (VDS = 15 Vdc, ID = 6.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 2 & 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 80 Vdc, ID = 13 Adc,
VGS = 10 Vdc, RG = 9.1 Ω)
Fall Time
Gate Charge
(VDS = 80 Vdc, ID = 13 Adc,
VGS = 10 Vdc)
BODYDRAIN DIODE RATINGS (Note 2)
Forward OnVoltage
(IS = 13 Adc, VGS = 0 Vdc)
(IS = 13 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 13 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min Typ Max Unit
100
147
Vdc
mV/°C
mAdc
− − 5.0
− − 50
− − ± 100 nAdc
Vdc
2.0 3.2 4.0
− −7.6 mV/°C
Ω
0.130 0.165
0.250 0.400
Vdc
1.82 2.34
6.0 mhos
390 550
pF
115 160
35 70
11 20 ns
40 80
20 40
36 70
14 20 nC
3.0
7.0
0.98 1.3 Vdc
0.88
85 ns
60
28
0.3 mC
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NTP13N10 Даташит, Описание, Даташиты
NTP13N10
26
24
VGS = 10 V
22 9 V
TJ = 25°C
20 8 V
18
16 7.5 V
14
7 V 6.5 V
6V
12
10 5.5 V
8
6 5V
4
2 4.5 V
0 0 1 2 3 4 5 6 7 8 9 10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
26
24 VDS 10 V
22
20
18
16
14
12
10
8
6
4
TJ = 25°C
2 TJ = 100°C TJ = 55°C
00 1 2 3 4 5 6 7 8 9
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
0.5
VGS = 10 V
0.4
0.3 TJ = 100°C
0.2 TJ = 25°C
0.1 TJ = 55°C
0.2
0.175
TJ = 25°C
0.15
0.125
VGS = 10 V
VGS = 15 V
0 0 2 4 6 8 10 12 14 16 18 20 22 24 26
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
0.1 0 2 4 6 8 10 12 14 16 18 20 22 24 26
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
3
ID = 6.5 A
2.5 VGS = 10 V
2
10,000 VGS = 0 V
1000
TJ = 150°C
1.5
1 100
0.5
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0
50 25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
175
TJ = 100°C
10
20
30 40 50 60 70 80 90 100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
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