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NTP18N06 PDF даташит

Спецификация NTP18N06 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTP18N06
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP18N06 Даташит, Описание, Даташиты
NTP18N06, NTB18N06
Power MOSFET
15 A, 60 V, N−Channel TO−220 & D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
N−Channel
Typical Applications
D
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Pb−Free Packages are Available
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 mW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp v 10 ms)
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp v 10 ms)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID 15 Adc
ID 8.0 Adc
IDM 45 Apk
PD 48.4 W
0.32 W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to °C
+175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, VDS = 60 Vdc,
IL(pk) = 11 A, L = 1.0 mH, RG = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, (1/8from case for 10 s)
EAS 61 mJ
RqJC
RqJA
TL
°C/W
3.1
72.5
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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V(BR)DSS
60 V
RDS(on) TYP
90 mW @ 10 V
ID MAX
15 A
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418AA
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx18N06G
AYWW
1
Gate
3
Source
2
Drain
NTx
18N06G
AYWW
12 3
Gate Drain Source
NTx18N06
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
1
Publication Order Number:
NTP18N06/D









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NTP18N06 Даташит, Описание, Даташиты
NTP18N06, NTB18N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 60 Vdc)
(VGS = 0 Vdc, VDS = 60 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 10 Vdc, ID = 7.5 Adc)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 10 Vdc, ID = 15 Adc)
(VGS = 10 Vdc, ID = 7.5 Adc, TJ = 150°C)
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 10 Vdc,
RG = 9.1 W) (Note 1)
Gate Charge
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward On−Voltage
(IS = 15 Adc, VGS = 0 Vdc) (Note 1)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 1)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
2. Switching characteristics are independent of operating junction temperature.
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qt
Q1
Q2
VSD
trr
ta
tb
QRR
60 67
− 62.4
Vdc
− mV/°C
mAdc
− − 1w.0ww.DataSheet4U.com
− − 10
− − ± 100 nAdc
Vdc
2.0 2.9 4.0
− 6.2 − mV/°C
mW
− 76 90
Vdc
− 1.2 1.62
− 1.08 −
− 6.8 − mhos
325 450
pF
− 108 150
− 34 70
− 10 15 ns
− 25 70
− 14 50
− 13 50
− 12 22 nC
− 4.1 −
− 4.5 −
− 0.95 1.15 Vdc
− 0.84 −
− 35 − ns
− 27 −
− 7.4 −
− 0.050 −
mC
ORDERING INFORMATION
Device
Package
Shipping
NTP18N06
TO−220AB
50 Units / Rail
NTP18N06G
NTB18N06
NTB18N06G
TO−220AB
(Pb−Free)
D2PAK
D2PAK
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
NTB18N06T4
NTB18N06T4G
D2PAK
D2PAK
(Pb−Free)
800 Units / Tape & Reel
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2









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NTP18N06 Даташит, Описание, Даташиты
NTP18N06, NTB18N06
32
VGS = 10 V
9V
24
8V
7V
6.5 V
16 6 V
5.5 V
8 5V
4.5 V
0
01 2 34 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
32
VDS 10 V
24
16
TJ = 25°C
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8
TJ = 100°C
0
34
TJ = −55°C
56
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.2
0.16
VGS = 10 V
0.12
0.08
0.04
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0 4 8 12 16 20 24 28 32
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.2
0.16
VGS = 15 V
0.12
0.08
0.04
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0 4 8 12 16 20 24 28 32
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
ID = 7.5 A
1.8 VGS = 10 V
1.6
1.4
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
TJ = 150°C
10
TJ = 100°C
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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