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BIC801M PDF даташит

Спецификация BIC801M изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Bias Controlled Monolithic IC».

Детали детали

Номер произв BIC801M
Описание Bias Controlled Monolithic IC
Производители Renesas Technology
логотип Renesas Technology логотип 

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BIC801M Даташит, Описание, Даташиты
BIC801M
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
www.DataSheet4U.com
ADE-208-705C (Z)
4th. Edition
Nov. 1998
Features
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
High gain;
PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)
Low noise;
NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143mod)
Outline
Notes: 1. Marking is “AY–”.
2. BIC801M is individual type number of HITACHI BICMIC.









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BIC801M Даташит, Описание, Даташиты
BIC801M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
Channel temperature
Storage temperature
ID
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
20
150
150
–55 to +150
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Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate1 to source breakdown V(BR)G1SS
voltage
Gate2 to source breakdown V(BR)G2SS
voltage
Gate1 to source cutoff current IG1SS
Min
6
+6
+6
Gate2 to source cutoff current IG2SS
Gate2 to source cutoff voltage VG2S(off)
0.5
Drain current
I DS(op)
7
Forward transfer admittance |yfs|
22
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance crss
Power gain
PG1
1.6
0.6
23
Noise figure
Power gain
NF1
PG2
17
Noise figure
NF2 —
Typ Max Unit
——V
——V
——V
— +100 nA
— +100 nA
0.7 1.0 V
10 13 mA
27 32 mS
2.0
1.0
0.024
27
2.3
1.4
0.05
pF
pF
pF
dB
1.1 1.6
21.5 —
dB
dB
1.75 2.3
dB
Test Conditions
ID = 200µA
VG2S = 0,VG1 = open
IG1 = +10µA
VG2S = VDS = 0
IG2 = +10µA
VG1S = VDS = 0
VG1S = +5V
VG2S = VDS = 0
VG2S = +5V
VG1S = VDS = 0
VDS = 5V, ID = 100µA
VG1 = open
VDS = 5V , VG2S = 4V
VG1 = open
VDS = 5V, ID = 10mA
VG2S =4V, f = 1kHz
VDS = 5V, VG2S =4V
VG1 = open
f = 1MHz
VDS = 5V, VG2S =4V
VG1 = open
f = 200MHz
VDS = 5V, VG2S =4V
VG1 = open
f = 900MHz
2









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BIC801M Даташит, Описание, Даташиты
Main Characteristics
BICw8w0w1M.DataSheet4U.com
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Номер в каталогеОписаниеПроизводители
BIC801MBias Controlled Monolithic ICRenesas Technology
Renesas Technology

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