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BIC702C PDF даташит

Спецификация BIC702C изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Bias Controlled Monolithic IC».

Детали детали

Номер произв BIC702C
Описание Bias Controlled Monolithic IC
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

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BIC702C Даташит, Описание, Даташиты
BIC702C
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
www.DataSheet4U.com
ADE-208-814D (Z)
5th. Edition
Mar. 2001
Features
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
High |yfs| ;
|yfs| = 29 mS typ. ( f = 1kHz)
Low noise;
NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.
Provide mini mold package; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
Notes:
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “BZ–”.
2. BIC702C is individual type number of HITACHI BICMIC.









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BIC702C Даташит, Описание, Даташиты
BIC702C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
Channel temperature
Storage temperature
ID
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
100
150
–55 to +150
Unit
wVww.DataSheet4U.com
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate1 to source breakdown V(BR)G1SS
voltage
Gate2 to source breakdown V(BR)G2SS
voltage
Gate2 to source cutoff current IG2SS
Gate2 to source cutoff voltage VG2S(off)
Min
6
+6
+6
0.5
Typ
0.7
Drain current
ID(op) 10 13
Forward transfer admittance |yfs|
24 29
Input capacitance
ciss 1.6 2.0
Output capacitance
coss 0.7 1.1
Reverse transfer capacitance crss
— 0.02
Power gain
PG1 24 28.5
Noise figure
Power gain
NF1 — 1.0
PG2 18 23
Noise figure
NF2 — 1.6
Max
+100
1.0
16
34
2.3
1.5
0.05
1.5
2.2
Unit
V
V
Test Conditions
ID = 200µA
VG2S = 0,VG1 = open
IG1 =+10µA, VG2S = VDS = 0
V IG2 = +10µA, VG1S = VDS = 0
nA VG2S = +5V, VG1S = VDS = 0
V VDS = 5V, ID = 100µA
VG1 = open
mA VDS = 5V , VG2S = 4V
VG1 = open
mS VDS = 5V, ID = 13mA
VG2S =4V, f = 1kHz
pF VDS = 5V, VG2S =4V
pF VG1 = open
pF f = 1MHz
dB VDS = 5V, VG2S =4V
VG1 = open
dB f = 200MHz
dB VDS = 5V, VG2S =4V
VG1 = open
dB f = 900MHz
2









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BIC702C Даташит, Описание, Даташиты
Test Circuits
BIC702C
DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Cwrwssw, N.DFa,tPaSGh)eet4U.com
VG2
Gate 2
VG1
Gate 1
Open
Drain
A
ID
Source
200 MHz Power Gain, Noise Figure Test Circuit
VT
1000p
VG2
1000p
VT
1000p
Input(50)
1000p
1000p
47k
47k
L1
1000p
36p 1SV70
BICMIC
47k
L2 1000p
Output(50)
10p max
RFC
1SV70
1000p
VD
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
Unit: : Resistance ()
Capacitance (F)
3










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