4AM15 PDF даташит
Спецификация 4AM15 изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «Silicon N-Channel/P-Channel Power MOS FET Array». |
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Детали детали
Номер произв | 4AM15 |
Описание | Silicon N-Channel/P-Channel Power MOS FET Array |
Производители | Hitachi Semiconductor |
логотип |
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4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A
P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
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4AM15
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 Device Operation
Ratings
Symbol
Nch Pch
VDSS
200 –200
VGSS
±20 ±20
ID 4 –4
ID(pulse)*1
16
IDR 4
Pch (Tc = 25°C)*2 32
Pch*2
4.0
–16
–4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
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4AM15
Electrical Characteristics (Ta = 25°C)
N Channel
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DS 200
S
Gate to source breakdown
voltage
V(BR)GS ±20
S
Gate to source leak current
IGSS —
Zero gate voltage drain current IDSS —
Gate to source cutoff voltage VGS(off) 2.0
Static drain to source on state RDS(on) —
resistance
Forward transfer admittance |yfs|
1.5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
—
—
—
—
—
—
—
—
—
Typ Max Unit Test conditions
——V
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
— ±10
— 250
— 4.0
0.33 0.5
µA
µA
V
Ω
3.0 —
S
750 —
260 —
40 —
19 —
26 —
45 —
24 —
1.0 —
pF
pF
pF
ns
ns
ns
ns
V
VGS = ±16 V, VDS = 0
VDS = 160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V*1
ID = 2 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2 A
VGS = 10 V
RL = 15 Ω
IF = 4 A, VGS = 0
125 — ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1957
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