DataSheet26.com

4AM15 PDF даташит

Спецификация 4AM15 изготовлена ​​​​«Hitachi Semiconductor» и имеет функцию, называемую «Silicon N-Channel/P-Channel Power MOS FET Array».

Детали детали

Номер произв 4AM15
Описание Silicon N-Channel/P-Channel Power MOS FET Array
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 

6 Pages
scroll

No Preview Available !

4AM15 Даташит, Описание, Даташиты
4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
N Channel: RDS(on) 0.5 , VGS = 10 V, ID = 2 A
P Channel: RDS(on) 0.9 , VGS = –10 V, ID = –2 A
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
Outline
www.DataSheet.in









No Preview Available !

4AM15 Даташит, Описание, Даташиты
4AM15
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. 4 Device Operation
Ratings
Symbol
Nch Pch
VDSS
200 –200
VGSS
±20 ±20
ID 4 –4
ID(pulse)*1
16
IDR 4
Pch (Tc = 25°C)*2 32
Pch*2
4.0
–16
–4
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2
www.DataSheet.in









No Preview Available !

4AM15 Даташит, Описание, Даташиты
4AM15
Electrical Characteristics (Ta = 25°C)
N Channel
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DS 200
S
Gate to source breakdown
voltage
V(BR)GS ±20
S
Gate to source leak current
IGSS —
Zero gate voltage drain current IDSS —
Gate to source cutoff voltage VGS(off) 2.0
Static drain to source on state RDS(on) —
resistance
Forward transfer admittance |yfs|
1.5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note: 1. Pulse Test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Typ Max Unit Test conditions
——V
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
— ±10
— 250
— 4.0
0.33 0.5
µA
µA
V
3.0 —
S
750 —
260 —
40 —
19 —
26 —
45 —
24 —
1.0 —
pF
pF
pF
ns
ns
ns
ns
V
VGS = ±16 V, VDS = 0
VDS = 160 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V*1
ID = 2 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2 A
VGS = 10 V
RL = 15
IF = 4 A, VGS = 0
125 — ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1957
www.DataSheet.in
3










Скачать PDF:

[ 4AM15.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
4AM11Silicon N-Channel/P-Channel Power MOS FET ArrayHitachi Semiconductor
Hitachi Semiconductor
4AM13Silicon N-Channel/P-Channel Power MOS FET ArrayHitachi Semiconductor
Hitachi Semiconductor
4AM15Silicon N-Channel/P-Channel Power MOS FET ArrayHitachi Semiconductor
Hitachi Semiconductor
4AM16Silicon N-Channel/P-Channel Power MOS FET ArrayHitachi Semiconductor
Hitachi Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск