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TGS4301-EPU PDF даташит

Спецификация TGS4301-EPU изготовлена ​​​​«TriQuint Semiconductor» и имеет функцию, называемую «High Power Ka-Band Absorptive SPDT Switch».

Детали детали

Номер произв TGS4301-EPU
Описание High Power Ka-Band Absorptive SPDT Switch
Производители TriQuint Semiconductor
логотип TriQuint Semiconductor логотип 

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TGS4301-EPU Даташит, Описание, Даташиты
Advance Product Information
January 28, 2003
Wideband mmWave VPIN SPDT Switch TGS4301-EPU
Key Features
• 24-43 GHz High Isolation SPDT
• < 2 dB Typical Insertion Loss
• -10dB Typical Return Loss
• On-Chip Bias resistors
• Flexible Bias Pad Configuration
• Reflective Switch Design
• Integrated DC Blocks on RF Pads
• 2.164 x 1.055 x 0.1 mm (2.283 mm2)
Fixtured Measured Performance
0
-1
-2
-3
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Radio
• Ka Band VSAT
• LMDS
-4
-5
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
-30
-35
-40
-45
-50
-55
-60
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
www.DataSheet.in
1









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TGS4301-EPU Даташит, Описание, Даташиты
Advance Product Information
January 28, 2003
TGS4301-EPU
TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
PIN
PD
TCH
TM
TSTG
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Input Continuous Wave Power
Power Dissipated
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Value
5V
-8 V
22.5 mA
TBD
TBD
150 °C
320 °C
-65 to 150 °C
Notes
2/, 3/
2/ 3/
3/
3/
5/
4/
1/ These ratings represent the maximum operable values for this device.
2/ V+max and I+max are both per bias pad.
3/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
4/ When operated at this bias condition with a base plate temperature of 70 0C, the
median life is reduced from TBD to TBD hours.
5/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
www.DataSheet.in
2









No Preview Available !

TGS4301-EPU Даташит, Описание, Даташиты
Advance Product Information
January 28, 2003
TGS4301-EPU
Measured Fixtured Data
Bias Conditions: Vcontrol=±5 V, I+=22 mA
0
-1
-2
-3
-4
-5
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
-30
-35
-40
-45
-50
-55
-60
24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
www.DataSheet.in
3










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Номер в каталогеОписаниеПроизводители
TGS4301-EPUHigh Power Ka-Band Absorptive SPDT SwitchTriQuint Semiconductor
TriQuint Semiconductor

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