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PDF MRF8P20160HR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8P20160HR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductor Products | |
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DataSheet.in
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
1880 MHz
1900 MHz
1920 MHz
16.5
16.6
16.5
44.8
45.3
45.8
7.0 --29.8
6.9 --30.1
6.9 --30.6
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1900 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 160 Watts CW
2025 MHz
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
2025 MHz
15.3 44.0
6.8 --30.0
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Document Number: MRF8P2160H
Rev. 1, 7/2010
MRF8P20160HR3
MRF8P20160HSR3
1880--2025 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20160HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20160HSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC 150 °C
Operating Junction Temperature (1,2)
TJ 225 °C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
1
1 page  
DataSheet.in
λ
4
λ
2
Single--ended
λ
4 Quadrature combined
λ
4 Doherty
λ
2 Push--pull
Figure 3. Possible Circuit Topologies
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
5
5 Page 
DataSheet.in
TYPICAL CHARACTERISTICS — 2025 MHz
15.7
15.6 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA
15.5 VGSB = 1.6 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth Input Signal
15.4 PAR = 9.9 dB @ 0.01% Probability on CCDF
15.3
15.2
44
ηD 43
42
41
40
Gps --29
15.1
PARC
--30
15 IRL --31
14.9 --32
14.8
ACPR
--33
14.7 --34
1995 2000 2005 2010 2015 2020 2025 2030 2035
f, FREQUENCY (MHz)
Figure 15. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 20 Watts Avg.
--16
--16.5
--17
--17.5
--18
--18.5
17
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
16 Bandwidth
15
2025 MHz
14 2010 MHz
ηD
ACPR
60
50
40
30
13 20
2025 MHz
12 2010 MHz
10
11
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Gps
0
1 10 100 300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
--10
--20
--30
--40
--50
--60
18
Gain
15
0
--5
12 --10
9 --15
IRL
6 VDD = 28 Vdc
Pin = 0 dBm
3 IDQA = 550 mA
VGSB = 1.6 Vdc
--20
--25
0 --30
1850 1900 1950 2000 2050 2100 2150 2200
f, FREQUENCY (MHz)
Figure 17. Broadband Frequency Response
--2.5
--3
--3.5
--4
--4.5
--5
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet MRF8P20160HR3.PDF ] | |
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