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TP3N120 PDF даташит

Спецификация TP3N120 изготовлена ​​​​«IXYS Corporation» и имеет функцию, называемую « ICTP3N120».

Детали детали

Номер произв TP3N120
Описание ICTP3N120
Производители IXYS Corporation
логотип IXYS Corporation логотип 

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TP3N120 Даташит, Описание, Даташиты
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
IXTA 3N120
IXTP 3N120
www.DataSheet4U.com
VDSS
I RD25 DS(on)
1200 V 3 A 4.5
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
1200
V
1200
V
±20 V
±30 V
3A
12 A
3A
20 mJ
700 mJ
5 V/ns
200 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
4g
2g
TO-220 (IXTP)
GDS
TO-263 (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Low RDS (on)
z Rated for unclamped Inductive load
Switching (UIS)
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
V
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
25 µA
1 mA
4.5
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS98844D(05/03)









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TP3N120 Даташит, Описание, Даташиты
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 0.5 • ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
1.5 2.6
1100 1350
110 135
40 60
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 (External),
17
15
32
18
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
42
8
21
(TO-220)
0.62
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
Notes: 1. Pulse test, t 300 µs, duty cycle d 2 %
3A
12 A
1.5 V
700 ns
IXTA 3N120www.DataSheet4U.com
IXTP 3N120
TO-220 (IXTP) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
TO-263 (IXTA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343









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TP3N120 Даташит, Описание, Даташиты
3
2.5
2
1.5
1
0.5
0
0
Fig. 1. Output Characteristics
@ 25 Deg. C
VGS = 10V
7V
6V
5V
2 4 6 8 10 12
VDS - Volts
3
2.5
2
1.5
1
0.5
0
0
Fig. 3. Output Characteristics
@ 125 Deg. C
VGS = 10V
7V
6V
5V
5 10 15 20
VDS - Volts
25
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
2.8
2.5 VGS = 10V
2.2 TJ = 125º C
1.9
1.6
1.3 TJ = 25º C
1
0.7
0
12 3 4 5
I D - Amperes
6
7
© 2003 IXYS All rights reserved
IXTA 3N120www.DataSheet4U.com
IXTP 3N120
Fig. 2. Extended Output Characteristics
@ 25 deg. C
7
VGS = 10V
6
7V
5
4
6V
3
2
1 5V
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
2.8
2.5 VGS = 10V
2.2
1.9
1.6 I D= 3A
1.3 I D= 1.5A
1
0.7
0.4
-50
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Drain Current vs. Case
T emperature
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150










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TP3N120 ICTP3N120IXYS Corporation
IXYS Corporation

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