(PDF) RTM2301 Datasheet - 20V N-Channel Enhancement Mode MOSFET

Número de pieza	RTM2301
Descripción	20V N-Channel Enhancement Mode MOSFET
Fabricantes	Sirectifier Global
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No Preview Available ! ELECTRONIC www.DataSheet4U.com RTM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain Features Advanced trench process technology High density cell design for ultra low on-resistance VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190mΩ Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. RTM2301CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 oC Ta = 75 oC Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Performance Symbol VDS VGS ID IDM PD TJ TJ, TSTG Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. Symbol TL Rθja Limit - 20V ±8 - 2.3 - 10 1.25 0.8 +150 - 55 to +150 Limit 5 100 Unit V V A A W oC oC Unit S oC/W http:// www.sirectsemi.com 1 page

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PDF RTM2301 Data sheet ( Hoja de datos )