|
|
PDF STP80N20M5 Data sheet ( Hoja de datos )
| Número de pieza | STP80N20M5 | |
| Descripción | D2PAK MDmesh V Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP80N20M5 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STB80N20M5
STP80N20M5
N-channel 200 V, 0.019 Ω, 61 A, TO-220, D2PAK
MDmesh™ V Power MOSFET
Features
Type
STB80N20M5
STP80N20M5
VDSS @
TJmax
RDS(on)
max
200 V < 0.023 Ω
ID
61 A
61 A
■ Amongst the best RDS(on) * area
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Application
Switching applications
Description
The devices are N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
1
D2PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB80N20M5
STP80N20M5
Marking
80N20M5
80N20M5
Package
D2PAK
TO-220
Packaging
Tape and reel
Tube
July 2010
Doc ID 15734 Rev 2
1/14
www.st.com
14
1 page  
STB80N20M5, STP80N20M5
www.DataSheet4U.com
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 160 V, ID = 61 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
(see Figure 19)
Min. Typ. Max Unit
66 ns
31 ns
--
131 ns
176 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
61 A
-
244 A
VSD (2) Forward on voltage
ISD = 61 A, VGS = 0
-
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 61 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
-
176
1.4
16
ns
µC
A
trr Reverse recovery time
ISD = 61 A, di/dt = 100 A/µs
218
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 19)
-2
19
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15734 Rev 2
5/14
5 Page 
STB80N20M5, STP80N20M5
www.DataSheet4U.com
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min Typ
A 4.40
b 0.61
b1 1.14
c 0.48
D 15.25
D1 1.27
E 10
e 2.40
e1 4.95
F 1.23
H1 6.20
J1 2.40
L 13
L1 3.50
L20 16.40
L30 28.90
∅P 3.75
Q 2.65
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Doc ID 15734 Rev 2
0015988_Rev_S
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STP80N20M5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP80N20M5 | D2PAK MDmesh V Power MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |