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PDF N04L63W1A Data sheet ( Hoja de datos )
| Número de pieza | N04L63W1A | |
| Descripción | 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit | |
| Fabricantes | ON Semiconductor | |
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N04L63W1Awww.DataSheet4U.com
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L63W1A is an integrated memory device
containing a 4 Mbit Static Random Access Memory
organized as 262,144 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L63W1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N04L63W1AB
N04L63W1AT
N04L63W1AB2
N04L63W1AT2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Options
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
48 - BGA
44 - TSOP II
48 - BGA Green
-40oC to +85oC
2.3V - 3.6V
70ns @ 2.7V
55ns @ 2.7V
4 µA
2 mA @ 1MHz
44 - TSOP II Green
Pin Configurations
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN
ONE
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 A17
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 NC
A4 CE I/O0
A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
6 x 8 mm
Pin Descriptions
Pin Name
A0-A17
WE
CE
OE
LB
UB
I/O0-I/O15
NC
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Not Connected
Power
Ground
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 13
Publication Order Number:
N04L63W1A/D
1 page  
N04L63W1A
www.DataShe
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
Timing
Item
Symbol
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
tRC
tAA
tCO
tOE
tLB, tUB
tLZ
tOLZ
tBZ
tHZ
tOHZ
tBHZ
tOH
-70
2.3 - 2.65 V
2.7 - 3.6 V
Min. Max. Min. Max.
85 70
85 70
85 70
30 25
85 70
10 10
55
10 10
0 20 0 20
0 20 0 20
0 20 0 20
10 10
-55
2.7 - 3.6 V
Min. Max.
55
55
55
25
55
10
5
10
0 20
0 20
0 20
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
tWC 85
70
55 ns
Chip Enable to End of Write
tCW 50
50
45 ns
Address Valid to End of Write
tAW 50
50
45 ns
Byte Select to End of Write
tBW 50
50
45 ns
Write Pulse Width
tWP 40
40
40 ns
Address Setup Time
tAS 0
0
0 ns
Write Recovery Time
tWR 0
0
0 ns
Write to High-Z Output
tWHZ
20
20
20 ns
Data to Write Time Overlap
tDW 40
40
40 ns
Data Hold from Write Time
tDH 0
0
0 ns
End Write to Low-Z Output
tOW 5
5
5 ns
Rev. 13 | Page 5 of 10 | www.onsemi.com
5 Page | ||
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