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N02L83W2A PDF даташит

Спецификация N02L83W2A изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit».

Детали детали

Номер произв N02L83W2A
Описание 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bit
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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N02L83W2A Даташит, Описание, Даташиты
N02L83W2Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 8 bit
Overview
The N02L83W2A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 262,144 words by 8 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. The
N02L83W2A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 256Kb x
8 SRAMs
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
Product Family
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
N02L83W2AT
32 - TSOP I
N02L83W2AN
N02L83W2AT2
32 - STSOP I
-40oC to +85oC
32 - TSOP I Green
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
N02L83W2AN2 32 - STSOP I Green
Pin Configuration
Pin Descriptions
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N02L83W2A
STSOP-I, TSOP-I
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VSS
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 8
Publication Order Number:
N02L83W2A/D









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N02L83W2A Даташит, Описание, Даташиты
N02L83W2A
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
16K Page
x 16 word
x 8 bit
RAM Array
CE1
CE2
WE
OE
Control
Logic
www.DataSheet4U.com
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Rev. 8 | Page 2 of 10 | www.onsemi.com









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N02L83W2A Даташит, Описание, Даташиты
N02L83W2A
www.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
Page Mode Operating Supply Current
@ 70 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
Read/Write Quiescent Operating Sup-
ply Current3
VCC
VDR
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
ICC3
ICC4
Maximum Standby Current3
ISB1
Maximum Data Retention Current3
IDR
Chip Disabled3
IOH = 0.2mA
IOL = -0.2mA
VIN = 0 to VCC
OE = VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.3
1.8
1.8
–0.3
VCC–0.2
3.0
2.0
12.0
3.6
VCC+0.3
0.6
0.2
0.5
0.5
V
V
V
V
V
V
µA
µA
4.0 mA
16.0 mA
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
4.0
mA
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.6 V
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
3.0 mA
2.0 20.0 µA
10.0 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
Rev. 8 | Page 3 of 10 | www.onsemi.com










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Номер в каталогеОписаниеПроизводители
N02L83W2A2Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx8 bitON Semiconductor
ON Semiconductor

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