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PDF TPC6002 Data sheet ( Hoja de datos )
| Número de pieza | TPC6002 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC6002
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6002
Notebook PC Applications
Portable Equipment Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 10 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
· Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
DC
Drain current
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
6
24
2.2
0.7
5.8
3
0.22
150
-55 to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
654
123
Marking (Note 5)
S2B
1 2001-11-07
1 page  
TPC6002
www.DataSheet4U.com
1000
300
100
30
10
3
1
0.3
0.1
0.001
rth - tw
Device mounted on a glass-
epoxy board (b) (Note 2b)
Device mounted on a glass-
epoxy board (a) (Note 2a)
0.01
0.1
1
10
Pulse tw (S)
Single pulse
100 1000
Safe operating area
100
30 ID max (pulsed)*
10
3
10 ms*
1 ms*
1
0.3
0.1
0.03
0.01
*: Single nonrepetitive pulse
Ta = 25°C
0.003 Curves must be derated
linearly with increase in
temperature
0.001
0.01 0.03 0.1
0.3
1
VDSS
max
3 10 30
Drain-source voltage VDS (V)
100
5 2001-11-07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TPC6002.PDF ] | |
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