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PDF TPC8022-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8022-H | |
| Descripción | High-Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
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TPC8022-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III)
TPC8022-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
CCFL Inverter Applications
Unit: mm
z Small footprint due to a small and thin package
z High speed switching
z Small gate charge: QSW = 3.5 nC (typ.)
z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 15 S (typ.)
z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
40
40
±20
7.5
30
1.9
1.0
26
7.5
0.08
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-17
1 page  
RDS (ON) – Ta
50
Common source
Pulse test
40
3.8
ID = 7.5 A
1.9
30
VGS = 4.5 V
20
ID = 7.5 A, 3.8 A, 1.9 A
10 V
10
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8022-H
www.DataSheet4U.com
100
Common source
Ta = 25°C
Pulse test
IDR – VDS
10 4.5 3
10
1
1 VGS = 0 V
0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Common source
Ta = 25°C
f = 1 MHz
VGS = 0 V
Ciss
Coss
100
Crss
10
0.1 1 10 100
Drain-source voltage VDS (V)
Vth – Ta
2.5
2.0
1.5
1.0
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.0
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10 s
0.4
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50 Common source
ID = 7.5 A
Ta = 25°C
Pulse test
40
VDS
30
16
20 8 VDD = 32 V
10
VGS
0
0 4 8 12 16
Total gate charge Qg (nC)
20
16
12
8
4
0
20
5 2006-11-17
5 Page | ||
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| PDF Descargar | [ Datasheet TPC8022-H.PDF ] | |
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