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PDF MRF6V3090NR5 Data sheet ( Hoja de datos )
| Número de pieza | MRF6V3090NR5 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Motorola Semiconductor | |
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Freescale Semiconductor
Technical Data
Document Number: MRF6V3090N
www.DRaetavS.he0e,t44U/.2co0m10
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
•
Typical DVB--T
Pout = 18 Watts
OFDM
Avg., f
P=e8r6fo0rmMaHnzc,e8:KVDMDo=de5,064VoQltAs,MID, QInp=u3t5S0igmnAal,
PAR = 9.5 dB @ 0.01% Probability on CCDF.
Power Gain — 22.0 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --62.0 dBc @ 4 kHz Bandwidth
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
470--860 MHz, 90 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V3090NR1(NR5)
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V3090NBR1(NBR5)
Table 1. Maximum Ratings
PARTS ARE SINGLE--ENDED
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
RFin/VGS
RFin/VGS
RFout/VDS
RFout/VDS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW,
50 Vdc, IDQ = 350 mA
Case Temperature 80°C, 90 W CW,
50 Vdc, IDQ = 350 mA
Symbol
RθJC
Value (2,3)
0.79
0.82
Unit
°C/W
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
1
1 page  
TYPICAL CHARACTERISTICS — CW
www.DataSheet4U.com
1000
Ciss
100 Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
10
0 10 20 30 40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
26
P3dB = 21.28 dBm (134.3 W)
25
24 P2dB = 21.06 dBm (127.6 W)
Ideal
23
P1dB = 20.7 dBm (117.5 W)
22
21
Actual
20
19
18
17 VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
--6 --4
--2
0
2
4
Pin, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
24
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
23
Gps
22
21
70
60
50
40
20 30
19
18 ηD
20
10
17 0
1 10 100 200
Pout, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power
25
24 VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
23
22
21
20
19
18 50 V
45 V
17
16 VDD = 40 V
0 20 40 60 80 100 120 140
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
25
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
24
23
TC = --30_C
22
Gps
TC = --30_C
70
60
85_C
25_C
50
40
21 85_C
20
25_C
ηD
30
20
19 10
18 0
1 10 100 200
Pout, OUTPUT POWER (WATTS)
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
5
5 Page 
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet MRF6V3090NR5.PDF ] | |
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