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PDF STP5NK80ZFP-H Data sheet ( Hoja de datos )
| Número de pieza | STP5NK80ZFP-H | |
| Descripción | TO-220FP Zener-protected SuperMESH Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP5NK80ZFP-H
N-channel 800 V, 1.9 Ω, 4.3 A, TO-220FP
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
STP5NK80ZFP-H 800 V
RDS(on)
max
< 2.4 Ω
ID
4.3 A
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Very good manufacturing repeatability
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STP5NK80ZFP-H
P5NK80ZFP-H
Package
TO-220FP
Packaging
Tube
Note:
Meets ECOPACK2® standards, an environmentally-friendly grade of products commonly
referred to as “halogen-free”.
April 2010
Doc ID 17372 Rev 1
1/13
www.st.com
13
1 page  
STP5NK80ZFP-H
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Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 4.3 A, VGS=0
ISD= 4.3 A,
di/dt = 100 A/µs,
VDD=40 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
4.3 A
-
17.2 A
- 1.6 V
500
-3
12
ns
µC
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 17372 Rev 1
5/13
5 Page 
STP5NK80ZFP-H
Table 9. TO-220FP mechanical data
Dim.
Min.
A 4.4
B 2.5
D 2.5
E 0.45
F 0.75
F1 1.15
F2 1.15
G 4.95
G1 2.4
H 10
L2
L3 28.6
L4 9.8
L5 2.9
L6 15.9
L7 9
Dia 3
Figure 20. TO-220FP drawing
L7
A
B
Dia
L6
H
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Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
D
L5
F1 F2
F
G
G1
L2
L3
Doc ID 17372 Rev 1
L4
7012510_Rev_K
11/13
11 Page | ||
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