DataSheet26.com

BF1218 PDF даташит

Спецификация BF1218 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Dual N-channel dual gate MOSFET».

Детали детали

Номер произв BF1218
Описание Dual N-channel dual gate MOSFET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

23 Pages
scroll

No Preview Available !

BF1218 Даташит, Описание, Даташиты
BF1218
Dual N-channel dual gate MOSFET
Rev. 01 — 14 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during Automatic Gain Control (AGC).
Integrated diodes between the gates and source protect against excessive input voltage
surges. The transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
digital and analog television tuners
professional communication equipment









No Preview Available !

BF1218 Даташит, Описание, Даташиты
NXP Semiconductors
www.DataSheet4U.com
BF1218
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
yfs
Ciss(G1)
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
DC
DC
Tsp 109 C
f = 100 MHz; Tj = 25 C
amplifier A; ID = 19 mA
amplifier B; ID = 15 mA
f = 100 MHz
amplifier A
amplifier B
Crss reverse transfer capacitance f = 100 MHz
NF noise figure
YS = YS(opt)
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross modulation
input level for k = 1 %;
fw = 50 MHz;
funw = 60 MHz
at 40 dB AGC
amplifier A
amplifier B
Tj junction temperature
Min Typ
--
--
[1] -
-
26 31
25 30
[2] -
[2] -
[2] -
2.1
2.1
20
- 0.9
- 1.4
[3] 102 105
[4] 102 105
--
Max Unit
6V
30 mA
180 mW
41 mS
40 mS
2.6 pF
2.6 pF
- fF
1.5 dB
2.0 dB
- dBV
- dBV
150 C
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 33 test circuit.
[4] Measured in Figure 34 test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Graphic symbol
654
G1A
AMP A
DA
123
G2
S
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
G1B
AMP B
sym089
DB
© NXP B.V. 2010. All rights reserved.
2 of 23









No Preview Available !

BF1218 Даташит, Описание, Даташиты
NXP Semiconductors
www.DataSheet4U.com
BF1218
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BF1218
-
plastic surface-mounted package; 6 leads
4. Marking
Table 4. Marking codes
Type number
BF1218
Marking code
M7
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
VDS drain-source voltage
ID drain current
IG1 gate1 current
IG2 gate2 current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
DC
DC
Tsp 109 C
-
-
-
-
[1] -
65
-
[1] Tsp is the temperature at the soldering point of the source lead.
Max
6
30
10
10
180
+150
150
Version
SOT363
Unit
V
mA
mA
mA
mW
C
C
BF1218_1
Product data sheet
250
Ptot
(mW)
200
001aac193
150
100
50
0
0 50 100 150 200
Tsp (˚C)
Fig 1. Power derating curve
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
3 of 23










Скачать PDF:

[ BF1218.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BF1210Dual N-channel dual gate MOSFETNXP Semiconductors
NXP Semiconductors
BF1211N-channel dual-gate MOS-FETsETC
ETC
BF1211N-channel dual-gate MOS-FETsPhilips
Philips
BF1211RN-channel dual-gate MOS-FETsETC
ETC

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск