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PDF MRF8P23080HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF8P23080HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• CITDylQippAipci=anlg2D,8oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC0i.ad7rtrhVied=rcW3, .P8--oC4uDMt =MH1Az6,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g7n2.i5t8uddVBeolt@s,
0.01% Probability on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
Gps
(dB)
14.6
14.7
14.6
ηD Output PAR ACPR
(%)
(dB)
(dBc)
42.0 6.7 --29.5
41.6 6.8 --31.5
41.4 6.6 --32.5
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 100 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Document Number: MRF8P23080H
www.DRaetavS.he0e,t45U/.2co0m10
MRF8P23080HR3
MRF8P23080HSR3
2300--2400 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P23080HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23080HSR3
RFinA/VGSA 3
RFinB/VGSB 4
1 RFoutA/VDSA
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
VDD
Tstg
TC
TJ
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
168
2.39
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
1
1 page  
λ
4
λ
2
Single--ended
λ
4 Quadrature combined
λ
4 Doherty
λ
2 Push--pull
Figure 3. Possible Circuit Topologies
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RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
5
5 Page 
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RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MRF8P23080HSR3.PDF ] | |
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