BF1216 Datasheet PDF - NXP Semiconductors
| Part Number | BF1216 | |
| Description | Dual N-channel dual gate MOSFET | |
| Manufacturers | NXP Semiconductors | |
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BF1216
Dual N-channel dual gate MOSFET
Rev. 01 — 29 April 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and very good cross modulation performance during AGC. Integrated diodes between the
gates and source protect against excessive input voltage surges. The transistor is
available as a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications running on a 5 V
supply voltage
digital and analog television tuners
professional communication equipment
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NXP Semiconductors
www.DataSheet4U.com
BF1216
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
Table 8. Dynamic characteristics for amplifier A and B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA.
Symbol Parameter
Conditions
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
transducer power gain
noise figure
cross modulation
f = 100 MHz; Tj = 25 °C; ID = 18 mA
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
amplifier A; BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
amplifier B; BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 % at 40 dB AGC; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
Min Typ Max Unit
23 27 38 mS
[1] - 2.5 -
pF
[1] - 2.4 -
pF
[1] - 0.8 -
pF
[1] -
25 -
fF
[1]
- 34 -
- 30 -
- 26 -
[1]
dB
dB
dB
- 34 - dB
- 30 - dB
- 26 - dB
- - 5 dB
- 1.0 - dB
- 1.5 - dB
[2]
90 104 -
- 100 -
- 104 -
105 107 -
dBμV
dBμV
dBμV
dBμV
[1] Calculated from S-parameters.
[2] Measured in Figure 17 test circuit.
BF1216_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 29 April 2010
© NXP B.V. 2010. All rights reserved.
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| Download | [ BF1216.PDF Datasheet ] | |
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