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PDF MRF18090BSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF18090BSR3 | |
| Descripción | LATERAL N-CHANNEL RF POWER MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
• GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
www.Dat•aShDeeesti4gUn.cedomfor Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF18090B
Rev. 7, 5/2006
MRF18090BR3
MRF18090BSR3
1.90 - 1.99 GHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETS
CASE 465B - 03, STYLE 1
NI - 880
MRF18090BR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
CASE 465C - 02, STYLE 1
NI - 880S
MRF18090BSR3
Symbol
VDSS
VGS
PD
Tstg
TC
TJ
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
250
1.43
- 65 to +150
150
200
Value
0.7
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
MRF18090BR3 MRF18090BSR3
1
1 page  
TYPICAL CHARACTERISTICS
16
IDQ = 1000 mA
15
750 mA
14
13 500 mA
12
300 mA
11
10
0.1
VDD = 26 Vdc
f = 1990 MHz
1 10 100
Pout, OUTPUT POWER (WATTS)
www.DataSheet4U.com
Figure 5. Power Gain versus
Output Power
1000
140
120
IDQ = 750 mA
f = 1990 MHz
100
Pin = 5 W
80
60 2 W
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
120
Pin = 5 W
100
80
60 2 W
VDD = 26 Vdc
40 IDQ = 750 mA
1W
20
0
1.91 1.93 1.95 1.97 1.99 2.01
f, FREQUENCY (GHz)
Figure 7. Output Power versus Frequency
16
14
120 60
h
100 50
Pout
80 40
60 30
40 20
VDD = 26 Vdc
20 IDQ = 750 mA 10
f = 1990 MHz
00
01 2 3 4 56
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
0
Gps
−5
12 −10
IRL
10 −15
8
6
1.88 1.90
1.92 1.94 1.96 1.98
f, FREQUENCY (GHz)
−20
VDD = 26 Vdc
IDQ = 750 mA
−25
2.00 2.02 2.04
Figure 9. Wideband Gain and IRL
(at Small Signal)
RF Device Data
Freescale Semiconductor
MRF18090BR3 MRF18090BSR3
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF18090BSR3.PDF ] | |
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