|
|
PDF K1S3216BCD Data sheet ( Hoja de datos )
| Número de pieza | K1S3216BCD | |
| Descripción | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K1S3216BCD (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
K1S3216BCD
Document Title
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
www.DataSheet4U.com
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
1.0 Finalize
Draft Date
Remark
November 02, 2004 Preliminary
Apri 06, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
April 2005
1 page  
K1S3216BCD
www.DataSheet4U.com
UtRAM
PRODUCT LIST
Part Name
K1S3216BCD-FI70
K1S3216BCD-FI85
Industrial Temperature Product(-40~85°C)
Function
48-FBGA, 70ns, 1.8V
48-FBGA, 85ns, 1.8V
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤3ns.
3. Undershoot: -1.0V in case of pulse width ≤3ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
1.4
-0.23)
Typ
1.85
0
-
-
Max
2.0
0
Vcc+0.32)
0.4
Unit
V
V
V
V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
ILI VIN=Vss to Vcc
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH
,VIO=Vss to Vcc
Cycle time=1µs, 100% duty, IIO=0mA, CS1≤0.2V,
ICC1 LB≤0.2V or/and UB≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or
Average operating current
VIN≥VCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH,
LB=VIL or/and UB=VIL,VIN=VIL or VIH
Output low voltage
Output high voltage
Standby Current(CMOS)
VOL
VOH
ISB12)
IOL=0.1mA
IOH=-0.1mA
Other inputs = 0~Vcc
1) CS1≥Vcc-0.2V, CS2≤Vcc-0.2V (CS1 controlled) or
2) 0V≤CS2≤0.2V(CS2 controlled)
1. Typical values are tested at VCC=1.8V, TA=25°C and not guaranteed.
2. ISB1 is measured after 60ms from the time when standby mode is set up.
Min Typ1) Max Unit
-1 -
1 µA
-1 -
1 µA
- - 5 mA
- 35 mA
- - 0.2 V
1.4 - - V
- - 100 µA
- 5 - Revision 1.0
April 2005
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K1S3216BCD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K1S3216BCC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |  SAMSUNG Electronics |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |